BC817-16LT1 ON Semiconductor, BC817-16LT1 Datasheet - Page 7

• Manufacturer Part Number: BC817-16LT1
• Description: TRANS NPN GP 500MA 45V SOT23
• Manufacturer: ON Semiconductor

Specifications of BC817-16LT1

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: BC817-16LT1OSTR

700
600
500
400
300
200
100
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
0.001
0.0001
Figure 18. Base Emitter Saturation Voltage vs.
150°C
−55°C
25°C
Figure 16. DC Current Gain vs. Collector
I
C
/I
B
= 10
I
I
0.001
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
0.01
Collector Current
Current
1000
100
0.01
10
TYPICAL CHARACTERISTICS − BC817−40LT1
0.1
Figure 20. Current Gain Bandwidth Product
V
T
0.1
A
CE
= 25°C
= 1 V
V
0.1
I
CE
C
, COLLECTOR CURRENT (mA)
1
−55°C
150°C
= 1 V
25°C
vs. Collector Current
http://onsemi.com
1
1
10
7
0.001
0.01
0.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1
0.001
0.0001
Figure 17. Collector Emitter Saturation Voltage
Figure 19. Base Emitter Voltage vs. Collector
100
V
I
C
CE
/I
B
= 5 V
= 10
0.001
I
I
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
vs. Collector Current
1000
0.01
Current
0.01
−55°C
150°C
25°C
25°C
0.1
0.1
150°C
−55°C
1
1