MJD32CT4 ON Semiconductor, MJD32CT4 Datasheet - Page 4

• Manufacturer Part Number: MJD32CT4
• Description: TRANS PWR PNP 3A 100V DPAK
• Manufacturer: ON Semiconductor

Specifications of MJD32CT4

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 375mA, 3A
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 3A, 4V
• Power - Max: 1.56W
• Frequency - Transition: 3MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MJD32CT4OSCT

1000
100
0.6
0.5
0.4
0.3
0.2
0.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
1
0
0.001
0.001
0.01
Figure 8. Collector−Emitter Saturation Voltage
I
C
V
150°C
/I
CE
Figure 6. DC Current Gain at V
B
Figure 10. Base-Emitter “On” Voltage
= 10
= 5 V
25°C
I
I
I
0.01
0.01
C
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
0.1
−55°C
−55°C
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
25°C
150°C
25°C
0.1
0.1
1
150°C
CE
1
1
V
CE
= 4 V
−55°C
http://onsemi.com
= 4 V
10
10
10
4
1000
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.6
1.2
0.8
0.4
10
1
2
0
0.01
0.001
0.01
10 mA
I
C
Figure 9. Base−Emitter Saturation Voltage
150°C
/I
Figure 11. Collector Saturation Region
Figure 7. DC Current Gain at V
B
100 mA
= 10
25°C
0.1
I
I
0.01
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
I
B
−55°C
, BASE CURRENT (mA)
0.1
500 mA
25°C
150°C
−55°C
1
0.1
1 A
10
1
I
C
= 3 A
CE
1
V
100
CE
= 2 V
= 2 V
25°C
T
A
=
1000
10
10