MJB44H11 ON Semiconductor, MJB44H11 Datasheet - Page 3

• Manufacturer Part Number: MJB44H11
• Description: TRANS PWR NPN COMP 10A 80V D2PAK
• Manufacturer: ON Semiconductor

Specifications of MJB44H11

• Transistor Type: NPN
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1V @ 400mA, 8A
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 4A, 1V
• Power - Max: 2W
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MJB44H11OS

100
1.0
0.5
0.2
5.0
3.0
2.0
0.3
0.1
50
30
20
10
1.0
Figure 2. Maximum Rated Forward Bias
2.0 3.0
T
DUTY CYCLE ≤ 50%
V
C
CE
≤ 70° C
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Safe Operating Area
5.0
7.0
3.0
2.0
1.0
T
A
0
10
T
60
40
20
dc
C
0
0
MJB44H11 (NPN), MJB45H11 (PNP)
20
20
1.0 ms
30
40
Figure 3. Power Derating
100 ms
50
http://onsemi.com
10 ms
70
1.0 ms
T, TEMPERATURE (°C)
60
100
T
A
80
3
T
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150°C. T
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
C
There are two limitations on the power handling ability of
The data of Figure 2 is based on T
100
120
J(pk)
140
may be calculated from the data in
160
J(pk)
= 150°C; T
C
− V
J(pk)
C
CE
is