MJW0281A ON Semiconductor, MJW0281A Datasheet - Page 2

• Manufacturer Part Number: MJW0281A
• Description: TRANS BIPO NPN 150W 260V TO-247
• Manufacturer: ON Semiconductor

Specifications of MJW0281A

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 260V
• Vce Saturation (max) @ Ib, Ic: 1V @ 500mA, 5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 3A, 5V
• Power - Max: 150W
• Frequency - Transition: 30MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Lead Free Status / RoHS Status: Lead free / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MJW0281AOS

THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
Current−Gain − Bandwidth Product
Output Capacitance
160
140
120
100
80
60
40
20
(I
(V
(V
(I
(I
(I
(I
(I
(I
(V
0
C
C
C
C
C
C
C
CB
EB
CB
0
= 30 mA, I
= 0.5 A, V
= 1.0 A, V
= 3.0 A, V
= 5.0 A, I
= 5.0 A, V
= 1.0 A, V
= 5.0 V, I
= 260 V, I
= 10 V, I
20
B
CE
CE
CE
CE
CE
B
E
C
= 0.5 A)
E
= 0)
= 0, f
T
= 0)
40
= 5.0 V)
= 5.0 V)
= 5.0 V)
= 5.0 V)
= 5.0 V, f
= 0)
C
Figure 1. Power Derating
, CASE TEMPERATURE (°C)
test
60
= 1.0 MHz)
test
= 1.0 MHz)
Characteristic
Characteristic
80
100
MJW0281A (NPN) MJW0302A (PNP)
(T
C
= 25°C unless otherwise noted)
120
140
http://onsemi.com
160
2
0.01
100
0.1
10
1
1
V
V
Symbol
Symbol
CE
V
V
CEO(sus)
R
I
CE(sat)
I
BE(on)
h
C
CBO
EBO
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Safe Operating Area
θJC
f
FE
T
ob
10
100 ms
Min
260
75
75
75
30
−
−
−
−
−
Value
0.83
DC
1.0 ms
100
Max
150
150
150
400
5.0
1.0
1.2
10
−
−
5.0 ms
10 ms
°C/W
MHz
Unit
Unit
mA
mA
pF
V
−
V
V
1000