MJE521G ON Semiconductor, MJE521G Datasheet - Page 3

• Manufacturer Part Number: MJE521G
• Description: TRANS POWER NPN 4A 40V TO225AA
• Manufacturer: ON Semiconductor
• Type: Medium Powerr

Specifications of MJE521G

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 40V
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 1A, 1V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Current, Collector: 4 A
• Current, Gain: 40
• Package Type: TO-225
• Polarity: NPN
• Power Dissipation: 40 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 3.12 °C/W
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 40 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Emitter To Base: 4 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Vce Saturation (max) @ Ib, Ic: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: MJE521GOS

H
Q
U
1
−B−
2
3
D
G
S
2 PL
V
0.25 (0.010)
−A−
K
F
M
A
M
0.25 (0.010)
B
M
M
PACKAGE DIMENSIONS
M
A
CASE 77−09
J
M
ISSUE Z
TO−225
MJE521
R
C
B
4
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
Y14.5M, 1982.
077−09.
STYLE 1:
DIM
G
M
Q
A
B
C
D
F
H
K
R
S
U
V
J
PIN 1. EMITTER
2. COLLECTOR
3. BASE
0.425
0.295
0.095
0.020
0.115
0.050
0.015
0.575
0.148
0.045
0.025
0.145
0.040
MIN
0.094 BSC
INCHES
5 TYP
_
0.435
0.305
0.105
0.026
0.130
0.095
0.025
0.655
0.158
0.065
0.035
0.155
MAX
−−−
10.80
14.61
MILLIMETERS
MIN
7.50
2.42
0.51
2.93
1.27
0.39
3.76
1.15
0.64
3.69
1.02
2.39 BSC
5 TYP
_
16.63
MAX
11.04
7.74
2.66
0.66
3.30
2.41
0.63
4.01
1.65
0.88
3.93
−−−