MPSW63G ON Semiconductor, MPSW63G Datasheet - Page 2

• Manufacturer Part Number: MPSW63G
• Description: TRANS PNP DARL SS 1W 30V TO92
• Manufacturer: ON Semiconductor

Specifications of MPSW63G

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 1W
• Frequency - Transition: 125MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage(max): 30V
• Emitter-base Voltage (max): 10V
• Collector-emitter Saturation Voltage: 1.5@0.1mA@100mAV
• Collector Current (dc) (max): 500mA
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: MPSW63GOS

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage, (Note 1)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain, (Note 1)
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Base −Emitter On Voltage
Output Capacitance
Input Capacitance
Input Impedance
Small−Signal Current Gain
Current −Gain − High Frequency
Output Admittance
Noise Figure
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
CE
CB
EB
CB
EB
= 10 mAdc, I
= 10 mAdc, V
= 100 mAdc, I
= 10 mAdc, V
= 100 mAdc, V
= 500 mAdc, V
= 50 mAdc, I
= 500 mAdc, I
= 500 mAdc, I
= 50 mAdc, V
= 10 mAdc, V
= 10 mAdc, V
= 10 mAdc, V
= 10 mAdc, V
= 1.0 mAdc, V
= 10 Vdc, I
= 30 Vdc, I
= 1.0 Vdc, I
= 25 Vdc, I
= 10 Vdc, I
C
C
E
B
B
E
E
C
BE
CE
CE
CE
CE
CE
CE
= 0)
B
B
= 0)
= 0)
CE
= 0.5 mAdc)
= 0)
= 0, f = 1.0 MHz)
CE
CE
= 0)
= 0, f = 1.0 MHz)
= 0.5 mAdc
= 0.5 mAdc)
= 0)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 1.0 kHz)
= 5.0 Vdc, f = 1.0 kHz)
= 5.0 Vdc, f = 100 MHz)
= 5.0 Vdc, f = 1.0 kHz)
= 5.0 Vdc, R
= 5.0 Vdc)
= 5.0 Vdc)
Characteristic
S
= 100 kW, f = 1.0 kHz)
(T
A
= 25°C unless otherwise noted)
2N6426, 2N6427
http://onsemi.com
2
2N6426
2N6427
2N6426
2N6427
2N6426
2N6427
2N6426
2N6427
2N6426
2N6427
2N6426
2N6427
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
I
I
BE(on)
C
|h
CBO
h
h
CES
EBO
hfe
NF
h
obo
FE
ibo
oe
fe
ie
|
20,000
10,000
30,000
20,000
20,000
14,000
20,000
10,000
Min
100
1.5
1.3
40
40
12
50
−
−
−
−
−
−
−
−
−
−
−
0.71
1.52
1.24
Typ
0.9
5.4
2.4
2.4
3.0
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
200,000
100,000
300,000
200,000
200,000
140,000
2000
1000
1000
Max
1.75
1.0
1.2
1.5
2.0
7.0
50
50
15
10
−
−
−
−
−
−
−
mmhos
nAdc
nAdc
Unit
mAdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
kW
pF
pF
dB
−
−
−