MMBT4401LT1G ON Semiconductor, MMBT4401LT1G Datasheet

MMBT4401LT1G

Manufacturer Part Number

MMBT4401LT1G

Description

TRANS GP SS NPN 40V SOT23

Manufacturer

ON Semiconductor

Type

Switchingr

Datasheets

1.MMBT4401LT3G.pdf (7 pages)

2.MMBT4401LT1G.pdf (3 pages)

Specifications of MMBT4401LT1G

Transistor Type

NPN

Current - Collector (ic) (max)

600mA

Voltage - Collector Emitter Breakdown (max)

40V

Vce Saturation (max) @ Ib, Ic

750mV @ 50mA, 500mA

Dc Current Gain (hfe) (min) @ Ic, Vce

100 @ 150mA, 1V

Power - Max

225mW

Frequency - Transition

250MHz

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Transistor Polarity

NPN

Number Of Elements

Collector-emitter Voltage

40V

Collector-base Voltage

60V

Emitter-base Voltage

Collector Current (dc) (max)

600mA

Power Dissipation

300mW

Frequency (max)

250MHz

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SOT-23

Configuration

Single

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

40 V

Emitter- Base Voltage Vebo

6 V

Continuous Collector Current

0.6 A

Maximum Dc Collector Current

0.6 A

Maximum Operating Frequency

250 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

20 at 0.1 mA at 1 V

Minimum Operating Temperature

- 55 C

Current, Collector

600 mA

Current, Gain

Frequency

250 MHz

Polarity

NPN

Primary Type

Voltage, Breakdown, Collector To Emitter

40 V

Voltage, Collector To Base

60 V

Voltage, Collector To Emitter

40 V

Voltage, Collector To Emitter, Saturation

0.75 V

Voltage, Emitter To Base

6 V

06+

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Compliant

Other names

MMBT4401LT1GOS
MMBT4401LT1GOS
MMBT4401LT1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMBT4401LT1G

Manufacturer:

Quantity:

210

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Part Number:

MMBT4401LT1G

Manufacturer:

Quantity:

146 400

Company:

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Part Number:

MMBT4401LT1G

Manufacturer:

Quantity:

30 000

Company:

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Part Number:

MMBT4401LT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

MMBT4401LT1G

Company:

H&T Electronics

Part Number:

MMBT4401LT1G

Quantity:

60 000

Current page: 1 of 3
Download datasheet (101Kb)

MMBT4401LT1

Switching Transistor

NPN Silicon

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*Transient pulses must not cause the junction temperature to be exceeded.

1. FR−5 = 1.0 0.75 0.062 in.

2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector −Emitter Voltage

Collector −Base Voltage

Emitter −Base Voltage

Collector Current − Continuous

Total Device Dissipation FR− 5 Board

Thermal Resistance, Junction−to−Ambient

Total Device Dissipation Alumina

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

Pb−Free Packages are Available

(Note 1) @T

Derate above 25°C

Substrate (Note 2) @T

Derate above 25°C

Characteristic

Rating

= 25°C

Preferred Device

Symbol

CEO

CBO

EBO

, T

qJA

stg

−55 to +150

Value

Max

600

225

556

300

417

6.0

1.8

2.4

mW/°C

mAdc

°C/W

Unit

Vdc

°C

†For information on tape and reel specifications,

Preferred devices are recommended choices for future use

and best overall value.

MMBT4401LT1

MMBT4401LT1G

MMBT4401LT3

MMBT4401LT3G SOT−23

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

Device

ORDERING INFORMATION

2X = Specific Device Code

MARKING DIAGRAM

BASE

= Date Code*

= Pb−Free Package

(Pb−Free)

Package

SOT−23

COLLECTOR

2X M G

EMITTER

SOT−23 (TO−236)

CASE 318

STYLE 6

10,000 Tape & Reel

3000 Tape & Reel

Shipping

†

Related parts for MMBT4401LT1G

MMBT4401LT1G Summary of contents

Page 1

... Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT4401LT1 SOT−23 3000 Tape & Reel MMBT4401LT1G SOT−23 3000 Tape & Reel (Pb−Free) MMBT4401LT3 SOT−23 10,000 Tape & Reel MMBT4401LT3G SOT−23 10,000 Tape & Reel (Pb− ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) Collector −Base Breakdown Voltage Emitter −Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain Collector −Emitter Saturation Voltage Base −Emitter Saturation Voltage ...

Page 3

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS ...

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