MMJT9435T1G ON Semiconductor, MMJT9435T1G Datasheet
MMJT9435T1G
Specifications of MMJT9435T1G
MMJT9435T1GOS
MMJT9435T1GOSTR
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MMJT9435T1G Summary of contents
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MMJT9435 Preferred Device Bipolar Power Transistors PNP Silicon Features Pb−Free Packages are Available Collector −Emitter Sustaining Voltage − Vdc (Min CEO(sus) High DC Current Gain − 125 (Min ...
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... ORDERING INFORMATION Device MMJT9435T1 MMJT9435T1G MMJT9435T3 MMJT9435T3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...
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ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...
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100 − 1 0.1 1 COLLECTOR CURRENT (A) C Figure 3. DC Current Gain 10 1.0 V BE(sat) 0.1 V CE(sat) 0.01 0.1 1 ...
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1.0 MHz test 100 10 0.1 1 COLLECTOR CURRENT (A) C Figure 9. Current−Gain Bandwidth Product 4.0 3 2.0 1 ...
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... H *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...