BC 807-25 E6433 Infineon Technologies, BC 807-25 E6433 Datasheet - Page 5
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BC 807-25 E6433
Manufacturer Part Number
BC 807-25 E6433
Description
TRANSISTOR PNP AF 45V SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BC_807-25_B5003.pdf
(11 pages)
Specifications of BC 807-25 E6433
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 100mA, 1V
Power - Max
330mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Maximum Operating Frequency
200 MHz
Collector- Emitter Voltage Vceo Max
45 V
Continuous Collector Current
0.5 A
Power Dissipation
330 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BC80725E6433XT
SP000010478
SP000010478
DC current gain h
V
h
DC current gain h
V
h
FE
FE
CE
CE
-grp. 16
-grp. 40
10
10
10
10
10
10
= 1 V
= 1 V
3
2
1
3
2
1
10
10
-5
-5
105 °C
85 °C
65 °C
25 °C
-40 °C
105 °C
85 °C
65 °C
25 °C
-40 °C
10
10
-4
-4
FE
FE
10
10
=
=
-3
-3
(I
(I
C
C
10
10
)
)
-2
-2
10
10
-1
-1
I
I
C
C
A
A
10
10
0
0
5
DC current gain h
V
h
Collector-emitter saturation voltage
I
C
C
FE
CE
= (V
10
mA
10
10
10
10
-grp. 25
5
5
5
10
10
10
= 1 V
-1
3
2
1
0
3
2
1
0
10
CEsat
-5
105 °C
85 °C
65 °C
25 °C
-40 °C
), h
10
0.2
-4
FE
150 ˚C
-50
FE
25
= 10
10
˚C
˚C
=
BC807.../BC808...
-3
0.4
(I
C
10
)
-2
2007-06-08
0.6
10
EHP00215
-1
V
I
V
C
CEsat
A
0.8
10
0