BC372 ON Semiconductor, BC372 Datasheet - Page 2

• Manufacturer Part Number: BC372
• Description: TRANS SS DARL NPN 100V 1A TO-92
• Manufacturer: ON Semiconductor

Specifications of BC372

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.1V @ 250µA, 250mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current−Gain Bandwidth Product
Output Capacitance
Noise Figure
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(V
(I
C
C
E
C
C
C
C
C
C
CB
CB
EB
CB
= 100 mAdc, I
= 100 mAdc, I
= 10 mAdc, I
= 250 mAdc, V
= 100 mAdc, V
= 250 mAdc, I
= 250 mAdc, I
= 100 mAdc, V
= 1.0 mAdc, V
= 10 V, I
= 80 Vdc, I
= 60 Vdc, I
= 10 Vdc, I
C
C
= 0)
E
E
E
B
E
= 0)
B
B
CE
= 0)
= 0)
= 0, f = 1.0 MHz)
CE
CE
CE
= 0)
= 0)
= 0.25 mAdc)
= 0.25 mAdc)
= 5.0 Vdc, R
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
Characteristic
g
(1)
= 100 kW, f = 1.0 kHz)
(T
A
= 25°C unless otherwise noted)
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BC372, BC373
2
BC372
BC373
BC372
BC373
BC372
BC373
V
V
V
Symbol
V
V
(BR)CBO
(BR)EBO
(BR)CES
I
I
CE(sat)
BE(sat)
h
C
CBO
EBO
NF
f
FE
T
ob
Min
100
100
100
8.0
80
80
12
10
−
−
−
−
−
−
−
Typ
200
1.0
1.4
2.0
10
−
−
−
−
−
−
−
−
−
−
Max
100
100
100
160
1.1
2.0
25
−
−
−
−
−
−
−
−
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF
K