BUH150 ON Semiconductor, BUH150 Datasheet

TRANS NPN SW 700V 15A TO-220AB

BUH150

Manufacturer Part Number
BUH150
Description
TRANS NPN SW 700V 15A TO-220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet
1.BUH150G.pdf (10 pages)

Specifications of BUH150

Transistor Type
NPN
Current - Collector (ic) (max)
15A
Voltage - Collector Emitter Breakdown (max)
700V
Vce Saturation (max) @ Ib, Ic
5V @ 4A, 20A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
8 @ 10A, 5V
Power - Max
150W
Frequency - Transition
23MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUH150
Manufacturer:
MOT
Quantity:
35 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUH150
Manufacturer:
ST
Quantity:
30 000
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
BUH150D
Manufacturer:
ST
0
BUH150G
SWITCHMODEt NPN
Silicon Planar Power
Transistor
for use in 150 Watts Halogen electronic transformers.
inrush current during either the startup conditions or under a short
circuit across the load.
Features
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 5
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Temperature
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
The BUH150G has an application specific state−of−art die designed
This power transistor is specifically designed to sustain the large
this Device
Reproducible Parametric Distributions
Improved Efficiency Due to the Low Base Drive Requirements:
Robustness Thanks to the Technology Developed to Manufacture
ON Semiconductor Six Sigma Philosophy Provides Tight and
These Devices are Pb−Free and are RoHS Compliant*
High and Flat DC Current Gain h
Fast Switching
Characteristics
Rating
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
C
= 25_C
Symbol
Symbol
T
V
V
V
V
FE
R
R
J
I
I
P
CEO
CBO
EBO
, T
T
CES
CM
BM
I
I
qJC
qJA
C
B
D
L
stg
−65 to 150
Value
Max
0.85
62.5
400
700
700
150
260
1.2
10
15
25
12
6
1
W/_C
_C/W
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
_C
_C
W
BUH150G
Device
700 VOLTS, 150 WATTS
POWER TRANSISTOR
1
BUH150 = Device Code
A
Y
WW
G
ORDERING INFORMATION
2
3
MARKING DIAGRAM
http://onsemi.com
15 AMPERES
(Pb−Free)
Package
TO−220
= Assembly Location
= Year
= Work Week
= Pb−Free Package
BUH150G
AY WW
Publication Order Number:
CASE 221A−09
TO−220AB
STYLE 1
50 Units / Rail
Shipping
BUH150/D

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BUH150 Summary of contents

Page 1

... BUH150G SWITCHMODEt NPN Silicon Planar Power Transistor The BUH150G has an application specific state−of−art die designed for use in 150 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large inrush current during either the startup conditions or under a short circuit across the load ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Characteristic Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

Page 3

ELECTRICAL CHARACTERISTICS Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Characteristic Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

Page 4

T = 125° 20° 25° 0.001 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain @ 1 Volt 100 T = 125° ...

Page 5

TYPICAL STATIC CHARACTERISTICS 1 20° 25° 125° 0.001 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 7. Base−Emitter Saturation ...

Page 6

TYPICAL SWITCHING CHARACTERISTICS 2000 1800 300 V CC 1600 1400 125°C 1200 1000 800 600 400 25°C 200 COLLECTOR CURRENT (AMPS) C ...

Page 7

TYPICAL SWITCHING CHARACTERISTICS 300 200 ...

Page 8

V CE dyn 1 ms dyn 90 TIME Figure 19. Dynamic Saturation Voltage Measurements + 100 W 150 MPF930 MPF930 ...

Page 9

... Second C GAIN ≥ 5 ≤ 125° -1.5 V 500 600 700 , COLLECTOR-EMITTER VOLTAGE (VOLTS) R (t) = r(t) R qJC qJC R = 0.83°C/W MAX qJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME (t) qJC J(pk) C (pk 100 (t)) for BUH150 − 800 1000 ...

Page 10

... S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BUH150/D ...

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