BUH50 ON Semiconductor, BUH50 Datasheet
BUH50
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BUH50 Summary of contents
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... BUH50G SWITCHMODEt NPN Silicon Planar Power Transistor The BUH50G has an application specific state−of−art die designed for use in 50 Watts HALOGEN electronic transformers and SWITCHMODE applications. Features • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain h Fast Switching • ...
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ELECTRICAL CHARACTERISTICS Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Characteristic Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...
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T = 125° 25° 40° 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain @ 1 Volt ...
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TYPICAL STATIC CHARACTERISTICS 125° 40° 25°C J 0.1 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 7. Base−Emitter Saturation Region TYPICAL SWITCHING ...
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Boff 300 200 COLLECTOR CURRENT (AMPS) C ...
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There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable operation; i.e., the transistor must not ...
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... Inductive Switching RBSOA L = 200 500 mH = ∞ Volts Volts 100 mA R selected for desired (t) = r(t) R qJC qJC R = 2.5°C/W MAX qJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME (t) qJC J(pk) C (pk 100 (t)) for BUH50 qJC = Volts selected for desired I B1 1000 ...
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... S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BUH50/D ...