MJB45H11 ON Semiconductor, MJB45H11 Datasheet

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MJB45H11

Manufacturer Part Number
MJB45H11
Description
TRANS PWR PNP 10A 80V D2PAK-3
Manufacturer
ON Semiconductor
Datasheet

Specifications of MJB45H11

Transistor Type
PNP
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1V @ 400mA, 8A
Current - Collector Cutoff (max)
10µA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 4A, 1V
Power - Max
2W
Frequency - Transition
40MHz
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJB45H11G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MJB45H11T4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MJB45H11T4G
Manufacturer:
ON/安森美
Quantity:
20 000
MJB44H11 (NPN),
MJB45H11 (PNP)
Complementary
Power Transistors
D
amplification and switching such as output or driver stages in
applications such as switching regulators, converters and power
amplifiers.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 2
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation
Total Power Dissipation
Operating and Storage Junction
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Complementary power transistors are for general purpose power
2
V
Low Collector−Emitter Saturation Voltage −
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Pb−Free Packages are Available
@ T
Derate above 25°C
@ T
Derate above 25°C
Temperature Range
PAK for Surface Mount
CE(sat)
A
C
= 25°C
= 25°C
= 1.0 V (Max) @ 8.0 A
Characteristic
Rating
− Continuous
− Peak
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
Preferred Devices
Symbol
Symbol
T
V
R
R
J
V
P
P
, T
CEO
I
qJC
qJA
EB
C
D
D
stg
−55 to 150
Value
0.016
1.67
Max
2.0
2.5
80
10
20
50
75
5
1
W/°C
W/°C
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Adc
°C
W
W
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MJB44H11
MJB44H11G
MJB44H11T4
MJB44H11T4G
MJB45H11
MJB45H11G
MJB45H11T4
MJB45H11T4G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
80 VOLTS, 50 WATTS
ORDERING INFORMATION
x
A
Y
WW
G
SILICON POWER
TRANSISTORS
10 AMPERES,
http://onsemi.com
= 4 or 5
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
CASE 418B
D
D
D
D
D
D
D
D
STYLE 1
2
2
2
2
2
2
2
2
D
PAK
PAK
PAK
PAK
PAK
PAK
PAK
PAK
2
Publication Order Number:
PAK
800/Tape & Reel
800/Tape & Reel
800/Tape & Reel
800/Tape & Reel
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
MARKING
DIAGRAM
Shipping
B4xH11G
MJB44H11/D
AYWW

Related parts for MJB45H11

MJB45H11 Summary of contents

Page 1

... MJB44H11 (NPN), MJB45H11 (PNP) Preferred Devices Complementary Power Transistors 2 D PAK for Surface Mount Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low Collector−Emitter Saturation Voltage − ...

Page 2

... D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.05 0.1 0.02 MJB44H11 (NPN), MJB45H11 (PNP 25°C unless otherwise noted 0.4 Adc 0.8 Adc MHz) MJB44H11 MJB45H11 = 10 Vdc MHz) MJB44H11 MJB45H11 MJB44H11 ...

Page 3

... MJB44H11 (NPN), MJB45H11 (PNP) 100 5.0 3.0 2.0 ≤ 70° DUTY CYCLE ≤ 50% 1.0 0.5 0.3 0.2 0.1 1.0 2.0 3.0 5.0 7 COLLECTOR−EMITTER VOLTAGE (VOLTS) CE Figure 2. Maximum Rated Forward Bias Safe Operating Area 3.0 60 2 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown ...

Page 4

... 25°C 0.4 J 0.2 V CE(sat COLLECTOR CURRENT (AMPS) C Figure 8. MJB44H11 On−Voltages 1000 100 0.1 Figure 5. MJB45H11 DC Current Gain 1000 T = 125°C J −40 °C 100 10 10 0.1 Figure 7. MJB45H11 Current Gain 1 BE(sat) 0.8 0 0 0.1 Figure 9. MJB45H11 On−Voltages http://onsemi.com ...

Page 5

... MJB44H11 (NPN), MJB45H11 (PNP) −B− −T− SEATING PLANE 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ...

Page 6

... Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MJB44H11 (NPN), MJB45H11 (PNP) N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2− ...

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