MPSA13RLRP ON Semiconductor, MPSA13RLRP Datasheet - Page 3

• Manufacturer Part Number: MPSA13RLRP
• Description: TRANS NPN DARL BIPO 30V TO-92
• Manufacturer: ON Semiconductor

Specifications of MPSA13RLRP

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 125MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage(max): 30V
• Emitter-base Voltage (max): 10V
• Collector-emitter Saturation Voltage: 1.5@0.1mA@100mAV
• Collector Current (dc) (max): 500mA
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Not Compliant

500
200
100
200
100
5.0
50
20
10
70
50
30
20
10
1.0
10
BANDWIDTH = 10 Hz TO 15.7 kHz
I
C
20
2.0
= 10 mA
Figure 4. Total Wideband Noise Voltage
100 mA
1.0 mA
50 100 200
5.0
R
Figure 2. Noise Voltage
S
, SOURCE RESISTANCE (kW)
10
f, FREQUENCY (Hz)
500 1 k 2 k
20
BANDWIDTH = 1.0 Hz
R
S
≈ 0
50
I
C
= 1.0 mA
100
100 mA
5 k 10 k 20 k
R
S
200
Figure 1. Transistor Noise Model
NOISE CHARACTERISTICS
10 mA
(V
MPSA13, MPSA14
CE
e
n
http://onsemi.com
500
50 k 100 k
= 5.0 Vdc, T
i
n
1000
3
TRANSISTOR
0.07
0.03
0.02
0.05
2.0
1.0
0.7
0.5
0.3
0.2
0.1
8.0
6.0
4.0
2.0
A
14
12
10
IDEAL
0
= 25°C)
10 20
1.0
I
C
2.0
= 1.0 mA
50 100 200
Figure 5. Wideband Noise Figure
5.0
Figure 3. Noise Current
R
S
, SOURCE RESISTANCE (kW)
10
f, FREQUENCY (Hz)
100 mA
500 1 k 2 k
I
C
20
10 mA
100 mA
= 1.0 mA
BANDWIDTH = 10 Hz TO 15.7 kHz
BANDWIDTH = 1.0 Hz
10 mA
50
100
5 k 10 k 20 k
200
500 1000
50 k 100 k