MSD42WT1 ON Semiconductor, MSD42WT1 Datasheet
MSD42WT1
Manufacturer Part Number
MSD42WT1
Description
TRANS NPN GP BIPO 300V SOT-323
Manufacturer
ON Semiconductor
Datasheet
1.MSD42T1G.pdf
(4 pages)
Specifications of MSD42WT1
Transistor Type
NPN
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 10V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MSD42WT1G
Manufacturer:
ON
Quantity:
30 000
MSD42WT1G, MSD42T1G
NPN Silicon General
Purpose High Voltage
Transistors
amplifier applications. This device is housed in the SC-70/SOT-323
and SC−59 packages which are designed for low power surface
mount applications.
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
May, 2010 − Rev. 7
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current − Continuous
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter−Base Cutoff Current
DC Current Gain (Note 2)
Collector-Emitter Saturation Voltage
This NPN Silicon Planar Transistor is designed for general purpose
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
recommended footprint.
(I
(I
(I
(V
(V
(V
(V
(Note 2) (I
I
B
C
C
E
CB
EB
CE
CE
= 2.0 mAdc)
= 1.0 mAdc, I
= 100 mAdc, I
= 100 mAdc, I
= 200 Vdc, I
= 6.0 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
Characteristic
C
Rating
Rating
= 20 mAdc,
C
C
E
B
E
B
E
= 1.0 mAdc)
= 30 mAdc)
= 0)
= 0)
= 0)
= 0)
= 0)
(T
A
= 25°C)
V
V
V
Symbol
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
V
V
V
Symbol
V
T
(BR)CEO
(BR)CBO
(BR)EBO
P
T
I
CE(sat)
stg
I
I
h
h
C
CBO
EBO
D
J
FE1
FE2
−55X+ 150
Min
300
300
6.0
25
40
−
−
−
Value
Max
300
300
150
150
150
6.0
Max
0.1
0.1
0.5
−
−
−
−
−
1
mAdc
Unit
Unit
mW
Vdc
Vdc
Vdc
°C
°C
Unit
Vdc
Vdc
Vdc
Vdc
mA
mA
−
†For information on tape and reel specifications,
MSD42WT1G
MSD42T1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SC−70 (SOT−323)
Device
(Note: Microdot may be in either location)
1
CASE 419
1
STYLE 3
XXX
M
G
ORDERING INFORMATION
1D MG
2
MARKING DIAGRAMS
G
3
http://onsemi.com
BASE
1
= Specific Device Code
= Date Code
= Pb−Free Package
(Pb−Free)
(Pb−Free)
Package
COLLECTOR
SC−70
SC−59
3
Publication Order Number:
EMITTER
2
3000 / Tape & Reel
3000 / Tape & Reel
CASE 318D
J1D MG
2
SC−59
Shipping
G
MSD42WT1/D
1
3
1
†
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MSD42WT1 Summary of contents
Page 1
... MSD42WT1G, MSD42T1G NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS ...
Page 2
T = +125°C J 100 80 25° -55° 0.1 100 10 1.0 0.1 0.1 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1 COLLECTOR CURRENT (mA) C Figure 3. “ON” Voltages 1.0 ...
Page 3
... A 0.05 (0.002) A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...
Page 4
... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your loca Sales Representative MSD42WT1/D ...