2N5551 ON Semiconductor, 2N5551 Datasheet

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2N5551

Manufacturer Part Number
2N5551
Description
TRANS NPN SS GP 0.6A 160V TO-92
Manufacturer
ON Semiconductor
Datasheet

Specifications of 2N5551

Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
160V
Vce Saturation (max) @ Ib, Ic
200mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
625mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
2N5551OS

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2N5550, 2N5551
Amplifier Transistors
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 4
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
Derate above 25°C
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Pb−Free Packages are Available*
Characteristic
Rating
A
C
Preferred Device
= 25°C
= 25°C
2N5550
2N5551
2N5550
2N5551
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
, T
EBO
I
qJA
qJC
C
D
D
stg
−55 to +150
Value
Max
83.3
140
160
160
180
600
625
200
6.0
5.0
1.5
12
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
(Note: Microdot may be in either location)
1 2
ORDERING INFORMATION
A
Y
WW = Work Week
G
3
MARKING DIAGRAM
http://onsemi.com
BASE
= Assembly Location
= Year
= Pb−Free Package
2
x = 0 or 1
AYWW G
555x
COLLECTOR
2N
G
Publication Order Number:
EMITTER
3
CASE 29
STYLE 1
1
TO−92
2N5550/D

Related parts for 2N5551

2N5551 Summary of contents

Page 1

... Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage 2N5550 2N5551 Collector − Base Voltage 2N5550 2N5551 Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ T = 25°C A Derate above 25° ...

Page 2

... Vdc 1.0 kHz Noise Figure = 250 mAdc 5.0 Vdc 1.0 kW 1.0 kHz Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2N5550, 2N5551 (T = 25°C unless otherwise noted) A 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 ...

Page 3

... REVERSE FORWARD −3 10 25°C −4 10 −5 10 0.4 0.3 0.2 0.1 0 0.1 0 BASE−EMITTER VOLTAGE (VOLTS) BE Figure 3. Collector Cut−Off Region 2N5550, 2N5551 1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain 0.1 0.2 0.5 1.0 2 BASE CURRENT (mA) B Figure 2. Collector Saturation Region 1 ...

Page 4

... EB(off 120 0.2 0.3 0.5 1.0 2.0 3.0 5 COLLECTOR CURRENT (mA) C Figure 8. Turn−On Time 2N5550, 2N5551 T = − 55°C to +135° for V VC CE(sat) q for V VB BE(sat) 0.2 0.3 0.5 1.0 2.0 3.0 5 COLLECTOR CURRENT (mA) C Figure 5. Temperature Coefficients 100 ...

Page 5

... Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2N5550, 2N5551 Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb− ...

Page 6

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com 2N5550, 2N5551 PACKAGE DIMENSIONS TO−92 TO−226AA CASE 29−11 ...

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