BC549C ON Semiconductor, BC549C Datasheet - Page 2
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BC549C
Manufacturer Part Number
BC549C
Description
TRANS NPN GP 30V 100MA TO-92
Manufacturer
ON Semiconductor
Datasheet
1.BC550CG.pdf
(4 pages)
Specifications of BC549C
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
625mW
Frequency - Transition
250MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
BC549COS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BC549C
Manufacturer:
FAIRCHILD
Quantity:
32 000
Part Number:
BC549C
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
BC549CG
Manufacturer:
ON
Quantity:
11 830
Company:
Part Number:
BC549CG
Manufacturer:
ON Semiconductor
Quantity:
6 500
1. I
2. Pulse test = 300 ms − Duty cycle = 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Base−Emitter On Voltage
Current −Gain — Bandwidth Product
Collector−Base Capacitance
Small−Signal Current Gain
Noise Figure
B
is value for which I
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(I
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
CB
= 10 mAdc, I
= 10 mAdc, I
= 10 mAdc, I
= 10 mAdc, V
= 2.0 mAdc, V
= 10 mAdc, I
= 10 mAdc, I
= 100 mAdc, I
= 100 mAdc, I
= 10 mAdc, V
= 100 mAdc, V
= 2.0 mAdc, V
= 10 mAdc, V
= 2.0 mAdc, V
= 200 mAdc, V
= 200 mAdc, V
= 30 V, I
= 30 V, I
= 4.0 Vdc, I
= 10 Vdc, I
C
E
E
= 11 mA at V
E
C
= 0)
= 0, T
B
B
B
CE
CE
E
C
CE
= 0)
= 0)
B
B
CE
CE
CE
CE
CE
CE
= 0)
= 0.5 mAdc)
= see note 1)
= 0, f = 1.0 MHz)
= 0)
= 5.0 mAdc, see note 2)
= 5.0 mAdc)
= 5.0 Vdc)
= 5.0 Vdc)
Characteristic
= 5.0 Vdc, f = 100 MHz)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 V, f = 1.0 kHz)
= 5.0 Vdc, R
= 5.0 Vdc, R
A
= +125°C)
CE
= 1.0 V.
(T
S
S
A
= 2.0 kW, f = 1.0 kHz)
= 100 kW, f = 1.0 kHz)
= 25°C unless otherwise noted)
R
S
Figure 1. Transistor Noise Model
BC549C, BC550C
e
n
http://onsemi.com
i
n
2
TRANSISTOR
IDEAL
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
I
I
BE(sat)
C
BE(on)
NF
NF
h
CBO
EBO
h
f
FE
cbo
T
fe
1
2
0.55
Min
100
420
450
5.0
45
50
−
−
−
−
−
−
−
−
−
−
−
−
−
0.075
0.25
0.52
0.55
0.62
Typ
270
500
250
600
0.3
1.1
2.5
0.6
−
−
−
−
−
−
−
Max
0.25
800
900
5.0
0.6
0.6
0.7
2.5
15
15
10
−
−
−
−
−
−
−
−
−
nAdc
mAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF
−
−