BC549C ON Semiconductor, BC549C Datasheet - Page 2

• Manufacturer Part Number: BC549C
• Description: TRANS NPN GP 30V 100MA TO-92
• Manufacturer: ON Semiconductor

Specifications of BC549C

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: BC549COS

1. I
2. Pulse test = 300 ms − Duty cycle = 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Base−Emitter On Voltage
Current −Gain — Bandwidth Product
Collector−Base Capacitance
Small−Signal Current Gain
Noise Figure
B
is value for which I
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(I
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
CB
= 10 mAdc, I
= 10 mAdc, I
= 10 mAdc, I
= 10 mAdc, V
= 2.0 mAdc, V
= 10 mAdc, I
= 10 mAdc, I
= 100 mAdc, I
= 100 mAdc, I
= 10 mAdc, V
= 100 mAdc, V
= 2.0 mAdc, V
= 10 mAdc, V
= 2.0 mAdc, V
= 200 mAdc, V
= 200 mAdc, V
= 30 V, I
= 30 V, I
= 4.0 Vdc, I
= 10 Vdc, I
C
E
E
= 11 mA at V
E
C
= 0)
= 0, T
B
B
B
CE
CE
E
C
CE
= 0)
= 0)
B
B
CE
CE
CE
CE
CE
CE
= 0)
= 0.5 mAdc)
= see note 1)
= 0, f = 1.0 MHz)
= 0)
= 5.0 mAdc, see note 2)
= 5.0 mAdc)
= 5.0 Vdc)
= 5.0 Vdc)
Characteristic
= 5.0 Vdc, f = 100 MHz)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 V, f = 1.0 kHz)
= 5.0 Vdc, R
= 5.0 Vdc, R
A
= +125°C)
CE
= 1.0 V.
(T
S
S
A
= 2.0 kW, f = 1.0 kHz)
= 100 kW, f = 1.0 kHz)
= 25°C unless otherwise noted)
R
S
Figure 1. Transistor Noise Model
BC549C, BC550C
e
n
http://onsemi.com
i
n
2
TRANSISTOR
IDEAL
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
I
I
BE(sat)
C
BE(on)
NF
NF
h
CBO
EBO
h
f
FE
cbo
T
fe
1
2
0.55
Min
100
420
450
5.0
45
50
−
−
−
−
−
−
−
−
−
−
−
−
−
0.075
0.25
0.52
0.55
0.62
Typ
270
500
250
600
0.3
1.1
2.5
0.6
−
−
−
−
−
−
−
Max
0.25
800
900
5.0
0.6
0.6
0.7
2.5
15
15
10
−
−
−
−
−
−
−
−
−
nAdc
mAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF
−
−