MPSA27 ON Semiconductor, MPSA27 Datasheet - Page 2

• Manufacturer Part Number: MPSA27
• Description: TRANS NPN DARL BIPO 60V TO-92
• Manufacturer: ON Semiconductor

Specifications of MPSA27

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (max): 500nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: MPSA27OS

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL− SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter On Voltage
Small Signal Current Gain
(I
(I
(V
(V
(V
(V
(V
(V
(V
(I
(I
(I
(I
(I
C
C
C
C
C
C
C
CB
CB
CB
CE
CE
CE
EB
= 100 mAdc, V
= 100 mAdc, I
= 10 mA, V
= 100 mA, V
= 100 mA, I
= 100 mA, V
= 10 mA, V
= 10 Vdc)
= 30 V, I
= 40 V, I
= 50 V, I
= 30 V, V
= 40 V, V
= 50 V, V
E
E
E
BE
BE
BE
CE
CE
B
= 0)
= 0)
= 0)
CE
CE
E
= 0.1 mAdc)
BE
= 0)
= 0)
= 0)
= 5.0 V)
= 5.0 V, f = 100 MHz)
= 0)
= 5.0 V)
= 5.0 Vdc)
= 0)
Characteristic
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
MPSA27
2
V
V
Symbol
V
V
(BR)CBO
(BR)CES
CE(sat)
I
I
I
BE(on)
CBO
h
CES
EBO
h
FE
fe
10,000
10,000
1.25
Min
60
60
−
−
−
−
−
Typ
2.4
−
−
−
−
−
−
−
−
−
Max
100
500
100
1.5
2.0
−
−
−
−
−
nAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
−
−