UNR32AE00L Panasonic - SSG, UNR32AE00L Datasheet - Page 2

• Manufacturer Part Number: UNR32AE00L
• Description: TRANS NPN W/RES 60 HFE SSS MINI
• Manufacturer: Panasonic - SSG

Specifications of UNR32AE00L

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 80mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 150MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SSS Mini3-F1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: UNR32AE00LTR

UNR32AE
2
120
300
200
100
10
80
40
10
10
1
0
0
0
−1
−1
V
CE
Ambient temperature T
Collector current I
= 10 V
Output current I
1
UNR32AE_V
UNR32AE_h
UNR32AE_P
40
1
25°C
V
h
h
h  I
P
FE
FE
IN
T
 T
 T

10
 I

 I
 I

−25°C
80
T
T
T
a
a
a
a
a
C
C
C
O
FE
O
IN
T
= 85°C
10
C
-T
-I
-I
V
T
(m A )
10
C
a
( mA )
O
a
O
a
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
2
= 0.2 V
( °C )
120
10
10
2
3
0.12
0.08
0.04
10
0
1
Collector-emitter voltage V
0
0
Collector-base voltage V
T
a
= 25°C
SJH00106AED
10
UNR32AE_C
UNR32AE_I
4
C
C
I
I
C
ob
 V
 V

 V
 V

20
CE
CE
CE
C
CB
ob
-V
-V
8
I
f = 1 MHz
T
CE
B
30
CB
a
= 500 µA
CE
CB
= 25°C
400 µA
300 µA
200 µA
100 µA
( V )
( V )
12
40
10
10
10
10
10
−1
−2
−1
10
1
1
2
0
−1
Collector current I
Input voltage V
UNR32AE_V
25°C
UNR32AE_I
V
V
1
4
I
CE(sat)
O
T
 V
 V

a
= 85°C
 I
 I

CE(sat)
IN
O
IN
10
-V
C
8
C
−25°C
I
C
IN
(m A )
V
T
(V)
-I
/ I
a
O
C
= 25°C
B
= 5 V
= 30
10
12
2