UNR32AM00L Panasonic - SSG, UNR32AM00L Datasheet
UNR32AM00L
Manufacturer Part Number
UNR32AM00L
Description
TRANS NPN W/RES 80 HFE SSS MINI
Manufacturer
Panasonic - SSG
Specifications of UNR32AM00L
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
80mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
150MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SSS Mini3-F1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
UNR32AM00LTR
Transistors with built-in Resistor
UNR32AM
Silicon NPN epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2003
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Parameter
Parameter
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
V
R
P
I
T
V
V
CBO
CEO
a
I
I
I
V
stg
V
C
1
CE(sat)
T
h
CBO
j
CEO
EBO
R
f
CBO
CEO
= 25°C
FE
OH
OL
/ R
T
1
2
−55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
100
125
CB
CE
EB
CE
CC
CC
CB
50
50
80
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJH00066BED
= 50 V, I
= 6 V, I
= 10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 10 V, I
B
C
E
Conditions
B
B
Unit
mW
B
C
B
E
E
mA
= 0
= 0
°C
°C
V
V
= 0
= 0.3 mA
= 0.5 V, R
= 2.5 V, R
= 0
= 0
= 5 mA
= −2 mA, f = 200 MHz
L
L
= 1 kΩ
= 1 kΩ
Marking Symbol: KH
Internal Connection
0.23
+0.05
–0.02
0.33
5°
+0.05
–0.02
(0.40)
(47 kΩ)
−30%
3
0.80
1.20
0.037
B
1
Min
4.9
R
50
50
80
R
1
±0.05
±0.05
(0.40)
2
(2.2 kΩ)
2
0.047
Typ
150
2.2
SSSMini3-F1 Package
+30%
0.057
Max
0.25
0.1
0.5
0.2
0.2
0.10
C
E
1: Base
2: Emitter
3: Collector
+0.05
–0.02
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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