UNR921MJ0L Panasonic - SSG, UNR921MJ0L Datasheet - Page 10
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UNR921MJ0L
Manufacturer Part Number
UNR921MJ0L
Description
TRANS NPN W/RES 80 HFE SSMINI 3P
Manufacturer
Panasonic - SSG
Specifications of UNR921MJ0L
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
150MHz
Power - Max
125mW
Mounting Type
Surface Mount
Package / Case
SS Mini3-F1 (SC 89)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
UN921MJ-(TX)
UN921MJTR
UNR921MJ0LTR
UNR921MJTR
UNR921MJTR
UN921MJTR
UNR921MJ0LTR
UNR921MJTR
UNR921MJTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UNR921MJ0L
Manufacturer:
SGMC
Quantity:
6 000
UNR921xJ Series
10
Characteristics charts of UNR921AJ
120
80
40
10
10
6
5
4
3
2
1
0
0
1
0
0
−1
Collector-emitter voltage V
Collector-base voltage V
Collector-base voltage V
2
C
C
1
I
ob
C
ob
10
I
4
B
V
V
=
V
0.5 mA
6
CE
CB
CB
10
f = 1 MHz
T
f = 1 MHz
I
T
E
a
a
T
= 25°C
= 0
CB
= 25°C
CB
a
20
8
CE
0.4 mA
0.3 mA
0.2 mA
= 25°C
0.1 mA
( V )
( V )
( V )
10
10
2
10
10
10
10
10
10
10
10
10
−1
−2
10
−1
−2
1
1
1
4
3
2
0.4
0
−1
I
−25°C
C
/ I
Collector current I
B
25°C
0.6
= 10
Input voltage V
Input voltage V
SJH00039BED
V
1
1
I
CE(sat)
I
T
O
0.8
O
a
= 75°C
V
V
I
1.0
IN
IN
10
IN
IN
C
2
C
( mA )
V
T
( V )
( V )
V
T
a
O
a
1.2
O
= 25°C
= 25°C
= 5 V
= 5 V
Transistors with built-in Resistor
10
1.4
3
2
10
10
10
10
400
300
200
100
10
10
−1
−2
10
1
1
2
2
0
10
1
−1
−1
V
CE
Collector current I
Output current I
Output current I
= 10 V
1
1
V
V
h
FE
IN
IN
10
10
I
I
I
O
O
C
O
10
O
C
( mA )
( mA )
V
T
V
T
10
a
a
T
( mA )
O
O
= 25°C
= 25°C
a
= 0.2 V
= 0.2 V
2
= 75°C
−25°C
25°C
10
10
10
2
2
3