DDTD122LU-7-F Diodes Inc, DDTD122LU-7-F Datasheet - Page 2
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DDTD122LU-7-F
Manufacturer Part Number
DDTD122LU-7-F
Description
TRANS PREBIASED NPN SC70-3
Manufacturer
Diodes Inc
Datasheet
1.DDTD122TU-7-F.pdf
(3 pages)
Specifications of DDTD122LU-7-F
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
220
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
56 @ 50mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Frequency - Transition
200MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DDTD122LU-FDITR
Electrical Characteristics
Electrical Characteristics
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
* Transistor - For Reference Only
DS30398 Rev. 6 - 2
Characteristic
Characteristic
DDTD122TU
DDTD142TU
DDTD122TU
DDTD142TU
DDTD122TU
DDTD142TU
DDTD122LU
DDTD122LU
DDTD122LU
DDTD122LU
DDTD142JU
DDTD142JU
DDTD142JU
DDTD142JU
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Symbol
Symbol
V
BV
BV
BV
V
V
V
I
I
I
CE(sat)
O(off)
h
CBO
O(on)
EBO
G
l(off)
l(on)
f
f
I
FE
CBO
CEO
EBO
T
T
l
www.diodes.com
l
2 of 3
Min
Min
100
100
0.3
0.3
56
56
50
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
Typ
200
⎯
⎯
⎯
⎯
⎯
⎯
Typ
250
250
200
⎯
⎯
⎯
⎯
⎯
⎯
Max
0.3V
2.0
2.0
0.5
⎯
28
13
⎯
⎯
Max
R1-Only, R2-Only Types
600
600
0.5
0.5
0.5
0.3
⎯
⎯
⎯
⎯
Unit
MHz V
mA V
μA
⎯
MHz V
Unit
V
V
V
μA
μA
⎯
V
V
V
V
R1, R2 Types
V
V
V
I
V
V
O
CC
O
O
I
CC
O
CE
I
I
I
I
V
V
I
I
/I
C
C
E
E
C
C
= 5V
CB
EB
CE
l
= 0.3V, I
= 0.3V, I
= 5V, I
= 50μA
= 1mA
= 50μA
= 50μA
= 50mA, I
= 5mA, V
= 50mA/2.5mA
= 10V, I
= 5V, I
= 50V, V
= 4V
= 50V
= 10V, I
O
O
O
O
= 50mA
E
Test Condition
= 100μA
I
Test Condition
CE
B
= 20mA
= 20mA
E
= 5mA, f = 100MHz
= 0V
= 2.5mA
= -5mA, f = 100MHz
= 5V
DDTD (LO-R1) U
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