DDTC115GCA-7-F Diodes Inc, DDTC115GCA-7-F Datasheet - Page 2

• Manufacturer Part Number: DDTC115GCA-7-F
• Description: TRANS PREBIAS NPN 200MW SOT23-3
• Manufacturer: Diodes Inc

Specifications of DDTC115GCA-7-F

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 82 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DDTC115GCA-FDITR

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Bleeder Resistor (R
Gain-Bandwidth Product*
* Transistor - For Reference Only
DS30332 Rev. 6 - 2
2
Characteristic
) Tolerance
DDTC114GCA
DDTC124GCA
DDTC144GCA
DDTC115GCA
DDTC114GCA
DDTC124GCA
DDTC144GCA
DDTC115GCA
@T
A
= 25°C unless otherwise specified
Symbol
V
BV
BV
BV
I
I
CE(sat)
ΔR
h
CBO
EBO
f
CBO
CEO
FE
EBO
T
2
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2 of 4
Min
300
140
-30
50
50
⎯
65
30
⎯
30
56
68
82
⎯
5
Typ
250
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
580
260
130
+30
0.5
0.3
⎯
⎯
⎯
58
⎯
⎯
MHz
Unit
μA
μA
⎯
%
V
V
V
V
I
I
I
I
I
I
V
V
I
I
V
f = 100MHz
C
C
E
E
E
E
C
C
CB
EB
CE
= 50μA
= 1mA
= 720μA, DDTC114GCA
= 330μA, DDTC124GCA
= 160μA, DDTC144GCA
= 72μA, DDTC115GCA
= 10mA, I
= 5mA, V
= 4V
= 50V
= 10V, I
DDTC (R2-ONLY SERIES) CA
Test Condition
CE
B
E
= 0.5mA
= -5mA,
= 5V
⎯
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