DDTA115TCA-7-F Diodes Inc, DDTA115TCA-7-F Datasheet - Page 2

• Manufacturer Part Number: DDTA115TCA-7-F
• Description: TRANS PREBIAS PNP 200MW SOT23-3
• Manufacturer: Diodes Inc

Specifications of DDTA115TCA-7-F

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DDTA115TCA-FDITR

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Input Resistor (R
Gain-Bandwidth Product*
* Transistor - For Reference Only
DS30335 Rev. 6 - 2
1
) Tolerance
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
V
BV
BV
BV
I
I
CE(sat)
ΔR
h
CBO
EBO
f
FE
CBO
CEO
EBO
T
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1
2 of 4
Min
100
-50
-50
-30
⎯
⎯
⎯
⎯
-5
Typ
250
250
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
-0.5
-0.5
-0.3
+30
600
⎯
⎯
⎯
⎯
MHz
Unit
μA
μA
⎯
%
V
V
V
V
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
f = 100MHz
C
C
E
C/
C/
C/
C/
C/
C/
C/
C/
C
CB
EB
CE
I
I
I
I
I
I
I
I
= -50μA
= -1mA
= -50μA
= -1mA, V
B
B
B
B
B
B
B
B
= -4V
= -50V
= -10V, I
= -10mA/-1mA
= -5mA/-0.5mA
= -2.5mA/-.25mA DDTA143TCA
= -1mA/-.1mA
= -5mA/-0.5mA
= -2.5mA/-.25mA DDTA144TCA
= -1mA/-0.1mA
= -.5mA/-.05mA
DDTA (R1-ONLY SERIES) CA
CE
E
Test Condition
= 5mA,
= -5V
⎯
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