DDTB142JU-7-F Diodes Inc, DDTB142JU-7-F Datasheet - Page 2

• Manufacturer Part Number: DDTB142JU-7-F
• Description: TRANS PREBIASED PNP SC70-3
• Manufacturer: Diodes Inc

Specifications of DDTB142JU-7-F

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 470
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 56 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DDTB142JU-FDITR

Electrical Characteristics
Electrical Characteristics
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
* Transistor - For Reference Only
DS30400 Rev. 6 - 2
Characteristic
Characteristic
DDTB122TU
DDTB142TU
DDTB122TU
DDTB142TU
DDTB122TU
DDTB142TU
DDTB122LU
DDTB142JU
DDTB122LU
DDTB122LU
DDTB142JU
DDTB122LU
DDTB142JU
DDTB142JU
@T
A
= 25°C unless otherwise specified
@T
Symbol
Symbol
V
BV
BV
BV
V
V
V
I
I
I
CE(sat)
O(off)
h
CBO
O(on)
EBO
G
A
l(off)
l(on)
f
f
I
FE
CBO
CEO
EBO
T
T
l
www.diodes.com
l
= 25°C unless otherwise specified
2 of 3
Min
-0.3
-0.3
Min
100
100
-50
-40
56
56
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-5
Typ
200
⎯
⎯
⎯
⎯
⎯
⎯
Typ
250
250
200
⎯
⎯
⎯
⎯
⎯
⎯
-0.3V
Max
-2.0
-2.0
-0.5
-28
-13
⎯
⎯
⎯
Max
-0.5
-0.5
-0.5
-0.3
600
600
⎯
⎯
⎯
⎯
Unit
MHz V
mA V
R1, R2 Types
μA
⎯
MHz V
Unit
V
V
V
μA
μA
⎯
V
V
V
V
V
V
V
I
V
V
O
CC
O
O
I
CC
O
CE
I
I
I
I
V
V
I
I
/I
C
C
E
E
C
C
R1 – Only Types
= -5V
CB
EB
CE
l
= -0.3V, I
= -0.3V, I
= -5V, I
= -50μA
= -1mA
= -50μA
= -50μA
= -50mA, I
= -5mA, V
= -50mA/-2.5mA
= -10V, I
= -5V, I
= -50V, V
= -4V
= -50V
= -10V, I
O
O
Test Condition
O
O
= -50mA
E
Test Condition
= -100μA
I
CE
B
= -20mA
= -20mA
E
= -5mA, f = 100MHz
= 0V
= -2.5mA
= 5mA, f = 100MHz
= -5V
DDTB (LO-R1) U
© Diodes Incorporated