UNR311300L Panasonic - SSG, UNR311300L Datasheet

TRANS PNP W/RES 80 HFE SSS MINI

UNR311300L

Manufacturer Part Number

UNR311300L

Description

TRANS PNP W/RES 80 HFE SSS MINI

Manufacturer

Panasonic - SSG

Datasheets

1.UNR311300L.pdf (3 pages)

2.UNR311300L.pdf (3 pages)

Specifications of UNR311300L

Transistor Type

PNP - Pre-Biased

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

50V

Resistor - Base (r1) (ohms)

47K

Resistor - Emitter Base (r2) (ohms)

47K

Dc Current Gain (hfe) (min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (max)

500nA

Frequency - Transition

80MHz

Power - Max

100mW

Mounting Type

Surface Mount

Package / Case

SSS Mini3-F1

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

UNR311300LTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

UNR311300L

Manufacturer:

MOTO

Quantity:

28 562

Current page: 1 of 3
Download datasheet (183Kb)

Transistors with built-in Resistor

UNR3113, UNR311A, UNR311T

Silicon PNP epitaxial planar transistor

For digital circuits

■ Features

■ Resistance by Part Number

■ Absolute Maximum Ratings T

■ Electrical Characteristics T

Publication date: May 2002

• Optimum for downsizing of the equipment and high-density mount-

• Contribute for low power consumption

• UNR3113

• UNR311A

• UNR311T

Collector to base voltage

Collector to emitter voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature

Collector to base voltage

Collector to emitter voltage

Collector cutoff current

Emitter cutoff

current

Forward current

transfer ratio

Collector to emitter saturation voltage

High-level output voltage

Low-level output voltage UNR3113

ing

Parameter

Parameter

Marking symbol

UNR3113, 311A

UNR311T

UNR3113, 311A

UNR311T

EY

6X

6C

UNR311A

UNR311T

Symbol

V

V

100 kΩ

47 kΩ

22 kΩ

T

P

I

T

CBO

CEO

(R

stg

C

T

j

a

Symbol

V

1

= 25°C ± 3°C

V

V

I

I

I

V

)

V

CE(sat)

h

CBO

CEO

EBO

CBO

CEO

a

FE

OH

OL

= 25°C

−55 to +125

Rating

−100

100 kΩ

−50

−50

100

125

47 kΩ

47 kΩ

(R

I

I

V

V

V

V

I

V

V

V

V

C

C

C

2

CB

CE

EB

CE

CC

CC

CC

CC

)

= −10 µA, I

= −2 mA, I

= −10 mA, I

SJH00041CED

= −50 V, I

= −6 V, I

= −10 V, I

= −50 V, I

= −5 V, V

= −5 V, V

= −5 V, V

= −5 V, V

Unit

mW

mA

°C

°C

V

V

Conditions

B

C

E

B

B

B

B

C

B

E

B

= 0

= 0

= 0

= − 0.3 mA

= − 0.5 V, R

= −3.5 V, R

= −5.0 V, R

= −2.5 V, R

= 0

= 0

= −5 mA

Internal Connection

L

L

L

L

= 1 kΩ

= 1 kΩ

= 1 kΩ

= 1 kΩ

0.23

+0.05

–0.02

0.33

5˚

+0.05

–0.02

(0.40)

B

−4.9

3

Min

−50

−50

0.80

1.20

1

80

80

±0.05

±0.05

(0.40)

R

R

2

1

2

Typ

SSSMini3-F1 Package

− 0.25

− 0.1

− 0.5

− 0.1

− 0.2

− 0.2

Max

400

0.10

C

E

+0.05

–0.02

1: Base

2: Emitter

3: Collector

Unit: mm

Unit

mA

µA

V

V

V

V

V

1

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