DDTC114ELP-7 Diodes Inc, DDTC114ELP-7 Datasheet - Page 2

• Manufacturer Part Number: DDTC114ELP-7
• Description: TRANS PNP PRE BIAS 3-DFN
• Manufacturer: Diodes Inc

Specifications of DDTC114ELP-7

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 10mA, 70mA
• Current - Collector Cutoff (max): 1µA
• Frequency - Transition: 250MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 3-DFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DDTC114ELPDITR

Electrical Characteristics
Off Characteristics (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage*
Collector Cutoff Current*
Base Cutoff Current (I
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current, I
Emitter-Base Cut Off Current
Input Off Voltage
On Characteristics (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage*
Base-Emitter Saturation Voltage*
Input-On Voltage
Input Current
Output On Voltage (Same as V
Input Resistance
Resistance Ratio
Small Signal Characteristics
Current Gain-Bandwidth Product
* Guaranteed by design.
Note: 4. Short duration pulse test used to minimize self-heating effect.
DS30945 Rev. 4 - 2
Pulse Test: Pulse width tp<300 us, Duty Cycle, d<=2%.
Characteristic
BEX
)
CE(SAT)
O(OFF)
)
@T
A
= 25°C unless otherwise specified
V
V
V
V
Symbol
V
(R2/R1)
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
V
CE(SAT)
BE(SAT)
BE(ON)
I
I
I
I
I(OFF)
h
O(ON)
CBO
CEO
CEX
I
EBO
R1
I(ON)
f
BL
FE
I
T
I
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Min
100
2.5
0.8
50
50
10
15
60
90
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
7
2 of 5
1.16
Typ
250
1.6
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
Max
0.15
0.25
0.25
0.85
0.95
0.98
0.88
0.5
0.5
0.5
0.4
0.5
0.2
0.3
1.2
0.3
1.2
13
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
Unit
MHz
mA
KΩ
mA
μA
μA
μA
μA
⎯
⎯
⎯
⎯
⎯
⎯
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
I
I
I
I
V
V
I
I
V
V
I
Test Condition
I
I
I
V
V
V
V
V
V
V
C
C
C
C
C
C
C
I
C
C
E
CE
CE
CE
CE
CE
CE
CE
O
I
= 2.5mA, I
CE
CE
CB
CB
EB
CC
CE
= 10mA, I
= 50mA, I
= 50mA, I
= 50mA, I
= 70mA, I
= 10mA, I
= 50mA, I
= 5V
= 50μA, I
= 10μA, I
= 1.0mA, I
= 0.3V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 50V, V
= 50V, V
= 50V, I
= 50V, I
= 4V, I
= 10V, I
= 5V, I
C
C
C
C
C
C
C
C
O
E
C
B
B
B
B
B
B
B
O
O
E
B
E
= 1mA
= 2mA
= 10mA
= 50mA
= 70mA
= 2mA
= 10mA
B
= 0
EB(OFF)
EB(OFF)
= 100uA
= 0
= 0
= 1mA
= 5mA
= 2.5mA
= 10mA
= 10mA
= 1mA, V
= 5mA, V
= 50mA
= 50mA
= 0
= 0
= 5mA, f = 1MHz
= 0
= 3.0V
= 3.0V
⎯
⎯
CE
CE
= 5V
= 5V
© Diodes Incorporated
DDTC114ELP