MUN2111T1G ON Semiconductor, MUN2111T1G Datasheet

TRANS BRT PNP 100MA 50V SC59

MUN2111T1G

Manufacturer Part Number
MUN2111T1G
Description
TRANS BRT PNP 100MA 50V SC59
Manufacturer
ON Semiconductor
Datasheet
1.MUN2111T1G.pdf (13 pages)

Specifications of MUN2111T1G

Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
230mW
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Transistor Polarity
PNP
Collector-emitter Voltage
50V
Dc Current Gain (min)
35
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-59
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MUN2111T1GOS
MUN2111T1GOS
MUN2111T1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MUN2111T1G
Manufacturer:
ON Semiconductor
Quantity:
132 109
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MUN2111T1G
Manufacturer:
ON
Quantity:
30 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
MUN2111T1G
Manufacturer:
ON/安森美
Quantity:
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MUN2111T1 Series
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
d e v i c e a n d i t s e x t e r n a l r e s i s t o r b i a s n e t w o r k . T h e
Bias Resistor Transistor (BRT) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. The BRT eliminates these
individual components by integrating them into a single device. The
use of a BRT can reduce both system cost and board space. The device
is housed in the SC−59 package which is designed for low power
surface mount applications.
Features
•
•
•
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 inch Pad.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 17
THERMAL CHARACTERISTICS
Collector − Base Voltage
Collector − Emitter Voltage
Collector Current
Total Device Dissipation
T
Derate above 25°C
Thermal Resistance,
Thermal Resistance,
Junction and Storage Temperature
Range
This new series of digital transistors is designed to replace a single
A
Soldering Eliminating the Possibility of Damage to the Die
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
ESD Rating − Human Body Model: Class 1
The SC−59 Package Can be Soldered Using Wave or Reflow
The Modified Gull−Winged Leads Absorb Thermal Stress During
Pb−Free Packages are Available
= 25°C
Junction−to−Ambient
Junction−to−Lead
Characteristic
Rating
− Machine Model: Class B
(T
A
= 25°C unless otherwise noted)
Preferred Devices
Symbol
Symbol
T
V
V
R
R
J
P
, T
CBO
CEO
I
qJA
qJL
C
D
stg
230 (Note 1)
338 (Note 2)
540 (Note 1)
370 (Note 2)
264 (Note 1)
287 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
−55 to +150
Value
Max
100
50
50
1
mAdc
°C/W
°C/W
°C/W
Unit
Unit
Vdc
Vdc
mW
°C
See detailed ordering and shipping information on page 2 of
this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
See device marking table on page 2 of this data sheet.
*Date Code orientation may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
DEVICE MARKING INFORMATION
PIN 2
BASE
(INPUT)
6x
M
G
ORDERING INFORMATION
MARKING DIAGRAM
http://onsemi.com
R1
R2
= Specific Device Code
= Date Code*
= Pb−Free Package
CASE 318D
PLASTIC
2
SC−59
6x M G
Publication Order Number:
G
1
PIN 1
EMITTER
(GROUND)
3
PIN 3
COLLECTOR
(OUTPUT)
1
MUN2111T1/D

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MUN2111T1G Summary of contents

Page 1

MUN2111T1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single ...

Page 2

... DEVICE MARKING AND RESISTOR VALUES Device MUN2111T1 MUN2111T1G MUN2111T3G MUN2112T1 MUN2112T1G MUN2113T1 MUN2113T1G MUN2114T1 MUN2114T1G MUN2115T1 (Note 3) MUN2115T1G (Note 3) MUN2116T1 (Note 3) MUN2116T1G (Note 3) MUN2130T1 (Note 3) MUN2130T1G (Note 3) MUN2131T1 (Note 3) MUN2131T1G (Note 3) MUN2132T1 (Note 3) MUN2132T1G (Note 3) MUN2133T1 (Note 3) MUN2133T1G (Note 3) MUN2134T1 (Note 3) ...

Page 3

ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Collector−Base Cutoff Current ( Collector−Emitter Cutoff Current ( Emitter−Base Cutoff Current ( mA, I ...

Page 4

ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 4) Output Voltage (off 5 0 1 0.050 1.0 kW ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS − MUN2111T1 −2°5C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 3. V vs. I CE(sat ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS − MUN2112T1 0.1 0. COLLECTOR CURRENT (mA) C Figure 8. V vs. I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS − MUN2113T1 −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 13. V CE(sat) 1 0.8 0.6 0.4 0 ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS − MUN2114T1 −25°C A 0.1 0.01 0. COLLECTOR CURRENT (mA) C Figure 18. V CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS − MUN2131T1 = 75°C 0.1 −25°C 0. COLLECTOR CURRENT (mA) C Figure 23. V vs. I CE(sat ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2133T1 0.1 −25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 28. V versus I CE(sat ...

Page 11

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2136T1 1 0.1 −25°C 0. COLLECTOR CURRENT (mA) C Figure 33. Maximum Collector Voltage vs. Collector Current 1.2 1.0 0.8 0.6 0.4 0 ...

Page 12

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2137T1 −25°C A 0.1 25°C 0. COLLECTOR CURRENT (mA) C Figure 38. Maximum Collector Voltage vs. Collector Current 1.4 1.2 1.0 0.8 0.6 0.4 ...

Page 13

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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