UNR32A100L Panasonic - SSG, UNR32A100L Datasheet - Page 2

TRANS NPN W/RES 35 HFE SSSMINI3P

UNR32A100L

Manufacturer Part Number
UNR32A100L
Description
TRANS NPN W/RES 35 HFE SSSMINI3P
Manufacturer
Panasonic - SSG
Datasheets

Specifications of UNR32A100L

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
80mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
150MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SSS Mini3-F1
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
UNR32A100LTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UNR32A100L
Manufacturer:
PANASONIC/松下
Quantity:
20 000
UNR32A1
2
250
200
150
100
100
120
100
50
10
80
60
40
20
0
1
0
0.1
1
0
Ambient temperature T
Collector current I
Output current I
40
1
V
h
P
FE
T
IN
T
25°C
 T
a
10
 I
 I
= 85°C
80
−25°C
C
a
O
O
10
C
V
(mA)
V
T
(mA)
CE
a
O
a
= 25°C
= 0.2 V
= 10 V
( °C )
120
100
100
80
60
40
20
10
0
1
0
0
0.8 mA
Collector-emitter voltage V
Collector-base voltage V
0.9 mA
2
SJH00055BED
10
C
4
I
C
ob
 V
 V
20
6
CE
CB
8
f = 1 MHz
T
I
T
B
30
a
a
= 25°C
CB
= 1.0 mA
= 25°C
CE
10
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
(V)
(V)
12
40
0.01
100
0.1
0.1
10
10
1
1
1
0
25°C
Collector current I
Input voltage V
T
V
a
10
= 85°C
CE(sat)
I
O
1
 V
−25°C
 I
IN
100
IN
C
C
V
T
I
(mA)
a
C
(V)
O
= 25°C
/ I
= 5 V
2
B
= 10
1 000

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