MMUN2132LT1G ON Semiconductor, MMUN2132LT1G Datasheet - Page 4
MMUN2132LT1G
Manufacturer Part Number
MMUN2132LT1G
Description
TRANS BRT PNP 50V SOT-23
Manufacturer
ON Semiconductor
Datasheet
1.MMUN2111LT3G.pdf
(13 pages)
Specifications of MMUN2132LT1G
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
246mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current Ic
100mA
Base Input Resistor R1
4.7kohm
Base-emitter Resistor R2
4.7kohm
Resistor Ratio, R1 / R2
1
Rf Transistor Case
SOT-23
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMUN2132LT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
MMUN2132LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMUN2132LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
Input Resistor
Resistor Ratio
Characteristic
(T
A
= 25°C unless otherwise noted) (Continued)
MMUN2130LT1G
MMUN2131LT1G
MMUN2132LT1G
MMUN2133LT1G
MMUN2134LT1G
MMUN2130LT1G
MMUN2131LT1G
MMUN2132LT1G
MMUN2133LT1G
MMUN2134LT1G
MMUN2112LT1G
MMUN2113LT1G
MMUN2114LT1G
MMUN2115LT1G
MMUN2116LT1G
MMUN2112LT1G
MMUN2113LT1G
MMUN2114LT1G
MMUN2115LT1G
MMUN2116LT1G
MMUN2111LT1G
MMUN2111LT1G
http://onsemi.com
4
Symbol
R
R1
1
/R
2
0.055
15.4
32.9
15.4
0.17
0.38
Min
7.0
7.0
7.0
3.3
0.7
1.5
3.3
3.3
0.8
0.8
0.8
0.8
0.8
0.8
−
−
0.21
0.47
Typ
4.7
1.0
2.2
4.7
4.7
1.0
1.0
1.0
1.0
1.0
1.0
0.1
10
22
47
10
10
22
−
−
0.185
Max
28.6
61.1
28.6
0.25
0.56
6.1
1.3
2.9
6.1
6.1
1.2
1.2
1.2
1.2
1.2
1.2
13
13
13
−
−
Unit
k W