MMUN2211LT3G ON Semiconductor, MMUN2211LT3G Datasheet - Page 15
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MMUN2211LT3G
Manufacturer Part Number
MMUN2211LT3G
Description
TRANS BRT PNP 50V SOT-23
Manufacturer
ON Semiconductor
Datasheet
1.MMUN2211LT3G.pdf
(18 pages)
Specifications of MMUN2211LT3G
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
246mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMUN2211LT3G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMUN2211LT3G
Manufacturer:
ON/安森美
Quantity:
20 000
0.001
3.5
2.5
1.5
0.5
0.01
4
3
2
1
0
0.1
0
1
0
I
T
C
A
/I
V
B
= −25°C
R,
10
75°C
Figure 59. Output Capacitance
= 10
REVERSE BIAS VOLTAGE (VOLTS)
20
I
C
, COLLECTOR CURRENT (mA)
Figure 57. V
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2238LT1G
20
40
CE(sat)
30
0.1
10
1
25°C
60
0
vs. I
V
Figure 61. Input Voltage vs. Output Current
O
= 0.2 V
C
f = 1 Mhz
T
40
A
80
10
= 25°C
http://onsemi.com
I
C,
25°C
COLLECTOR CURRENT (mA)
75°C
50
100
15
20
1000
0.01
100
100
0.1
10
10
1
1
T
1
0
A
30
= −25°C
Figure 60. Output Current vs. Input Voltage
T
75°C
A
= −25°C
T
1
75°C
I
A
C
Figure 58. DC Current Gain
40
V
, COLLECTOR CURRENT (mA)
= −25°C
25°C
in,
INPUT VOLTAGE (VOLTS)
2
50
10
3
25°C
V
4
CE
V
O
= 10 V
= 5 V
100
5