DTA114TET1G ON Semiconductor, DTA114TET1G Datasheet - Page 12
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DTA114TET1G
Manufacturer Part Number
DTA114TET1G
Description
TRANS PNP 50V 100MA 10K SC75-3
Manufacturer
ON Semiconductor
Datasheet
1.DTA114EET1G.pdf
(13 pages)
Specifications of DTA114TET1G
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current Ic
100mA
Base Input Resistor R1
10kohm
Rf Transistor Case
SC-75
No. Of Pins
3
Filter Terminals
SMD
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DTA114TET1G
Manufacturer:
ON Semiconductor
Quantity:
3 800
Company:
Part Number:
DTA114TET1G
Manufacturer:
ON
Quantity:
30 000
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0
0.1
0
1
0
Figure 34. Maximum Collector Voltage versus
5
V
25°C
10
R
Figure 36. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
, COLLECTOR CURRENT (mA)
20
15
Collector Current
TYPICAL ELECTRICAL CHARACTERISTICS — DTA144WET1
20
100
30
T
10
A
1
25
= −25°C
0
Figure 38. Input Voltage versus Output Current
30
25°C
40
35
5
f = 1 MHz
I
T
E
I
A
C
75°C
= 0 V
, COLLECTOR CURRENT (mA)
I
= 25°C
DTA114EET1 Series
50
C
40
/I
B
http://onsemi.com
= 10
45
T
10
A
60
= −25°C
50
12
0.001
1000
0.01
15
100
100
0.1
10
10
1
0
1
Figure 37. Output Current versus Input Voltage
75°C
V
O
1
= 0.2 V
20
2
I
Figure 35. DC Current Gain
C
V
, COLLECTOR CURRENT (mA)
in
3
, INPUT VOLTAGE (VOLTS)
25
4
25°C
5
10
75°C
6
T
A
75°C
7
= −25°C
T
A
= −25°C
8
V
CE
V
9
= 10 V
O
25°C
= 5 V
10
100
11