DTA143EET1G ON Semiconductor, DTA143EET1G Datasheet - Page 6
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DTA143EET1G
Manufacturer Part Number
DTA143EET1G
Description
TRANS PNP 50V 4.7/4.7K SC75-3
Manufacturer
ON Semiconductor
Datasheet
1.DTA114EET1G.pdf
(13 pages)
Specifications of DTA143EET1G
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DTA143EET1G
Manufacturer:
TDK
Quantity:
64 000
Company:
Part Number:
DTA143EET1G
Manufacturer:
ON
Quantity:
30 000
0.01
0.1
1
4
3
2
1
0
0
0
I
C
/I
B
= 10
10
Figure 5. Output Capacitance
V
Figure 3. V
R
, REVERSE BIAS VOLTAGE (VOLTS)
20
I
C
, COLLECTOR CURRENT (mA)
20
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EET1
CE(sat)
100
0.1
10
1
T
0
versus I
30
A
75°C
= −25°C
Figure 7. Input Voltage versus Output Current
V
O
= 0.2 V
40
C
f = 1 MHz
l
T
10
E
40
A
= 0 V
= 25°C
DTA114EET1 Series
25°C
I
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
50
20
50
6
T
0.001
30
A
1000
0.01
100
100
= −25°C
0.1
10
10
75°C
1
1
0
Figure 6. Output Current versus Input Voltage
1
25°C
40
75°C
2
Figure 4. DC Current Gain
I
C
V
, COLLECTOR CURRENT (mA)
50
in
T
3
, INPUT VOLTAGE (VOLTS)
A
25°C
= −25°C
4
10
5
6
V
O
7
= 5 V
8
V
T
CE
A
= 75°C
= 10 V
9
−25°C
25°C
100
10