DTA144EET1G ON Semiconductor, DTA144EET1G Datasheet - Page 10
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DTA144EET1G
Manufacturer Part Number
DTA144EET1G
Description
TRAN PNP 50V 100MA 47/47K SC75-3
Manufacturer
ON Semiconductor
Datasheet
1.DTA114EET1G.pdf
(13 pages)
Specifications of DTA144EET1G
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DTA144EET1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
DTA144EET1G
Manufacturer:
PH
Quantity:
2 890
Part Number:
DTA144EET1G
Manufacturer:
ON/安森美
Quantity:
20 000
0.1
0.001
10
0.01
1
0.1
4.5
3.5
2.5
1.5
0.5
4
3
2
1
0
0
1
Figure 27. Input Voltage versus Output Current
0
0
V
O
I
C
= 0.2 V
2
/I
B
= 10
10
4
Figure 25. Output Capacitance
V
Figure 23. V
I
6
C
R
20
, COLLECTOR CURRENT (mA)
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
75°C
8
20
10
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114YET1
15 20
CE(sat)
40
T
30
A
= −25°C
versus I
25 30
75°C
T
A
= −25°C
25°C
f = 1 MHz
l
T
60
E
40
A
35 40
C
= 0 V
= 25°C
DTA114EET1 Series
http://onsemi.com
25°C
45 50
50
80
10
100
180
160
140
120
100
10
Figure 28. Inexpensive, Unregulated Current Source
80
60
40
20
1
0
1
0
Figure 26. Output Current versus Input Voltage
V
CE
2
= 10 V
4
Typical Application
2
6
for PNP BRTs
Figure 24. DC Current Gain
I
C
V
8
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
10
T
4
A
15 20 40 50 60 70 80 90
= 75°C
−25°C
−25°C
6
25°C
V
O
= 5 V
T
A
+12 V
= 75°C
8
25°C
LOAD
10
100