DTC114TET1G ON Semiconductor, DTC114TET1G Datasheet - Page 5
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DTC114TET1G
Manufacturer Part Number
DTC114TET1G
Description
TRANS NPN 50V 100MA 10K SC75-3
Manufacturer
ON Semiconductor
Datasheet
1.DTC114EET1G.pdf
(11 pages)
Specifications of DTC114TET1G
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current Ic
100mA
Base Input Resistor R1
10kohm
Rf Transistor Case
SC-75
No. Of Pins
3
Filter Terminals
SMD
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DTC114TET1G
Manufacturer:
ON Semiconductor
Quantity:
2 300
0.001
0.01
0.1
4
2
1
0
3
1
0
0
I
C
/I
B
= 10
10
Figure 5. Output Capacitance
Figure 3. V
V
20
R
I
, REVERSE BIAS VOLTAGE (VOLTS)
C
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS − DTC114EET1
20
CE(sat)
0.1
10
1
0
versus I
V
Figure 7. Input Voltage versus Output Current
30
O
= 0.2 V
T
A
40
= −25°C
10
C
f = 1 MHz
I
T
E
40
DTC114EET1 Series
75°C
A
I
C
= 0 V
= 25°C
, COLLECTOR CURRENT (mA)
http://onsemi.com
25°C
20
50
T
50
A
= −25°C
5
0.001
1000
75°C
30
0.01
100
100
0.1
10
10
1
1
0
Figure 6. Output Current versus Input Voltage
75°C
1
40
25°C
2
Figure 4. DC Current Gain
25°C
I
T
C
V
A
, COLLECTOR CURRENT (mA)
3
in
= −25°C
, INPUT VOLTAGE (VOLTS)
50
4
10
5
6
7
T
8
V
A
CE
= 75°C
V
O
= 10 V
−25°C
= 5 V
9
25°C
100
10