MUN2232T1G ON Semiconductor, MUN2232T1G Datasheet

TRANS BRT NPN 100MA 50V SC-59

MUN2232T1G

Manufacturer Part Number
MUN2232T1G
Description
TRANS BRT NPN 100MA 50V SC-59
Manufacturer
ON Semiconductor
Datasheet

Specifications of MUN2232T1G

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
338mW
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Transistor Polarity
NPN
Collector-emitter Voltage
50V
Dc Current Gain (min)
15
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-59
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MUN2232T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MUN2232T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MUN2232T1G
0
MUN2211T1 Series
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC-59 package which is designed for low power surface
mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 @ Minimum Pad.
2. FR-4 @ 1.0 x 1.0 inch Pad.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 13
THERMAL CHARACTERISTICS
Collector‐Base Voltage
Collector‐Emitter Voltage
Collector Current
Total Device Dissipation
T
Derate above 25°C
Thermal Resistance, Junction‐to‐Ambient
Thermal Resistance, Junction‐to‐Lead
Junction and Storage Temperature
Range
This new series of digital transistors is designed to replace a single
A
Soldering Eliminating the Possibility of Damage to the Die
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
ESD Rating - Human Body Model: Class 1
The SC-59 Package can be Soldered Using Wave or Reflow
The Modified Gull-Winged Leads Absorb Thermal Stress During
Pb-Free Packages are Available
= 25°C
Characteristic
Rating
- Machine Model: Class B
(T
A
= 25°C unless otherwise noted)
Preferred Devices
Symbol
Symbol
T
V
V
R
R
J
P
, T
CBO
CEO
I
qJA
qJL
C
D
stg
230 (Note 1)
338 (Note 2)
540 (Note 1)
370 (Note 2)
264 (Note 1)
287 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
- 55 to +150
Value
Max
100
50
50
1
mAdc
°C/W
°C/W
°C/W
Unit
Unit
Vdc
Vdc
mW
°C
See detailed ordering and shipping information in the table on
page 2 of this data sheet.
See specific marking information in the Device Marking and
Resistor Values table on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
(INPUT)
*Date Code orientation may vary depending
(Note: Microdot may be in either location)
DEVICE MARKING INFORMATION
BASE
upon manufacturing location.
8x
M
G
PIN 2
2
ORDERING INFORMATION
= Device Code (Refer to page 2)
= Date Code*
= Pb-Free Package
1
BIAS RESISTOR
MARKING DIAGRAM
TRANSISTORS
http://onsemi.com
NPN SILICON
3
R
R
2
1
8x M G
G
Publication Order Number:
CASE 318D
STYLE 1
SC-59
1
PIN 1
EMITTER
(GROUND)
PIN 3
COLLECTOR
(OUTPUT)
MUN2211T1/D

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MUN2232T1G Summary of contents

Page 1

MUN2211T1 Series Preferred Devices Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor ...

Page 2

... MUN2216T1 SC-59 MUN2216T1G SC-59 (Pb-Free) MUN2230T1 SC-59 MUN2230T1G SC-59 (Pb-Free) MUN2231T1 (Note 3) SC-59 MUN2231T1G (Note 3) SC-59 (Pb-Free) MUN2232T1 SC-59 MUN2232T1G SC-59 (Pb-Free) MUN2233T1 SC-59 MUN2233T1G SC-59 (Pb-Free) MUN2234T1 (Note 3) SC-59 MUN2234T1G (Note 3) SC-59 (Pb-Free) MUN2236T1 SC-59 MUN2236T1G SC-59 (Pb-Free) MUN2237T1 ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector‐Base Cutoff Current ( Collector‐Emitter Cutoff Current ( Emitter‐Base Cutoff Current ( mA, I Collector‐Base ...

Page 4

ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 5) (Continued) Output Voltage ( 1 1.0 kW ...

Page 5

MUN2211T1 Series 350 300 250 200 150 100 R = 370°C/W 50 qJA AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve http://onsemi.com 5 100 150 ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS - MUN2211T1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS - MUN2212T1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS - MUN2213T1 -25° 25°C 1 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS - MUN2214T1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4 3.5 3 2.5 2 1 ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2215T1 0.1 -25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 11

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2216T1 0.1 -25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 12

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2230T1 0.1 -25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 13

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2232T1 75°C 0.1 -25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 37. V versus I CE(sat ...

Page 14

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2233T1 0.1 -25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 42. V versus I CE(sat) 4 3.5 3 2.5 2 1.5 1 ...

Page 15

TYPICAL ELECTRICAL CHARACTERISTICS - MUN2236T1 -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 47. V versus I CE(sat) 5 4.5 4 3.5 ...

Page 16

TYPICAL ELECTRICAL CHARACTERISTICS - MUN2237T1 -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 52. V versus I CE(sat) 2 1.8 1.6 1.4 ...

Page 17

MUN2211T1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V FROM mP OR OTHER LOGIC Figure 57. Level Shifter: Connects Volt Circuits to Logic V CC OUT IN Figure 58. Open Collector Inverter: Inverts the Input Signal Figure ...

Page 18

... A A1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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