MUN5131T1G ON Semiconductor, MUN5131T1G Datasheet - Page 8
![TRANS BRT PNP 100MA 50V SOT-363](/photos/5/30/53065/sc___70_sot___323__419___04_sml.jpg)
MUN5131T1G
Manufacturer Part Number
MUN5131T1G
Description
TRANS BRT PNP 100MA 50V SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.MUN5112T1G.pdf
(13 pages)
Specifications of MUN5131T1G
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
2.2K
Dc Current Gain (hfe) (min) @ Ic, Vce
8 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 5mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
202mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MUN5131T1G
Manufacturer:
ON
Quantity:
30 000
0.001
0.1
10
0.01
1
4.5
3.5
2.5
1.5
0.5
0.1
4
3
2
1
0
1
0
Figure 21. Input Voltage versus Output Current
0
0
V
O
I
C
2
= 0.2 V
/I
B
= 10
4
10
Figure 19. Output Capacitance
Figure 17. V
V
6
R
I
20
C
, REVERSE BIAS VOLTAGE (VOLTS)
I
, COLLECTOR CURRENT (mA)
C
, COLLECTOR CURRENT (mA)
8
75°C
20
10
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5114T1
15 20
CE(sat)
40
T
A
30
= -25°C
versus I
25 30
75°C
T
A
= -25°C
25°C
f = 1 MHz
l
T
60
E
A
35 40
40
C
= 0 V
= 25°C
http://onsemi.com
25°C
45 50
50
80
8
180
160
140
120
100
100
Figure 22. Inexpensive, Unregulated Current Source
10
80
60
40
20
1
0
1
0
Figure 20. Output Current versus Input Voltage
V
CE
2
= 10 V
4
Typical Application
2
for PNP BRTs
6
Figure 18. DC Current Gain
I
C
8
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
10
T
4
A
15 20 40 50 60 70 80 90
= 75°C
-25°C
-25°C
6
25°C
V
O
= 5 V
T
A
+12 V
= 75°C
8
25°C
LOAD
10
100