MUN2214T1G ON Semiconductor, MUN2214T1G Datasheet - Page 7

• Manufacturer Part Number: MUN2214T1G
• Description: TRANS BRT NPN 100MA 50V SC59
• Manufacturer: ON Semiconductor

Specifications of MUN2214T1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 338mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 10kohm
• Base-emitter Resistor R2: 47kohm
• Resistor Ratio, R1 / R2: 0.21
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MUN2214T1GOS

0.001
0.01
0.1
1
4
3
2
0
1
0
0
I
C
/I
B
= 10
10
Figure 9. Output Capacitance
V
Figure 7. V
R
20
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
20
TYPICAL ELECTRICAL CHARACTERISTICS - MUN2212T1
CE(sat)
40
100
0.1
10
1
0
Figure 11. Input Voltage versus Output Current
30
versus I
V
O
= 0.2 V
10
60
C
T
f = 1 MHz
I
T
A
E
40
A
= -25°C
= 0 V
I
MUN2211T1 Series
= 25°C
C
, COLLECTOR CURRENT (mA)
75°C
http://onsemi.com
25°C
20
80
50
7
0.001
1000
0.01
100
100
30
0.1
10
10
1
T
1
0
A
Figure 10. Output Current versus Input Voltage
= -25°C
75°C
40
2
Figure 8. DC Current Gain
25°C
I
C
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
50
4
75°C
10
6
25°C
T
A
V
V
8
= -25°C
CE
O
T
A
= 5 V
= 10 V
-25°C
= 75°C
25°C
100
10