BCR 112 E6327 Infineon Technologies, BCR 112 E6327 Datasheet

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BCR 112 E6327

Manufacturer Part Number
BCR 112 E6327
Description
TRANSISTOR NPN DGTL AF SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCR 112 E6327

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
140MHz
Power - Max
200mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
4.7 KOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BCR112E6327XT
SP000010747
NPN Silicon Digital Transistor
BCR112/F
BCR112W
Type
BCR112
BCR112F
BCR112W
1
Pb-containing package may be available upon special request
Switching circuit, inverter, interface circuit,
Built in bias resistor (R
BCR112U: Two internally isolated
BCR112U: For orientation in reel see
Pb-free (RoHS compliant) package
Qualified according AEC Q101
driver circuit
transistors with good matching
in one multichip package
package information below
1
B
R
1
R
2
C
3
E
EHA07184
2
1
=4.7k , R
Marking
WFs
WFs
WFs
2
=4.7k )
1)
1=B
1=B
1=B
2=E
2=E
2=E
1
Pin Configuration
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
BCR112...
Package
SOT23
TSFP-3
SOT323
2007-09-17

Related parts for BCR 112 E6327

BCR 112 E6327 Summary of contents

Page 1

NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =4. BCR112U: Two internally isolated transistors with good matching in one multichip package BCR112U: For orientation in reel see package information ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Input forward voltage Input reverse voltage Collector current Total power dissipation- BCR112, T 102°C S BCR112F, T 128°C S BCR112W, T 124°C S Junction temperature Storage temperature Thermal Resistance Parameter 1) Junction - ...

Page 3

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage I = 100 µ Collector-base breakdown voltage µ Collector-base cutoff current ...

Page 4

DC current gain (common emitter configuration -40 °C -25 ° °C 85 °C 125 ° Input ...

Page 5

Total power dissipation P BCR112 300 mW 250 225 200 175 150 125 100 Total power dissipation P BCR112W 300 mW 250 225 200 175 150 125 100 75 50 ...

Page 6

Permissible Pulse Load totmax totDC p BCR112 0.005 0.01 0.02 0.05 0.1 0.2 0 Permissible ...

Page 7

Permissible Pulse Load totmax totDC p BCR112W 0.005 0.01 0.02 0.05 0.1 0.2 0 ...

Page 8

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 9

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT323 2 ±0.2 0.1 MAX. +0.1 3x 0.3 -0.05 0 0.65 0.65 0.2 0.6 ...

Page 10

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-3 1.2 ±0.05 0.2 0.55 ±0.05 ±0. 0.2 0.15 ±0.05 0.4 ±0.05 0.4 ...

Page 11

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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