MMUN2212LT1G ON Semiconductor, MMUN2212LT1G Datasheet - Page 2

TRANS BRT NPN 100MA 50V SOT23

MMUN2212LT1G

Manufacturer Part Number
MMUN2212LT1G
Description
TRANS BRT NPN 100MA 50V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMUN2212LT1G

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
22K
Resistor - Emitter Base (r2) (ohms)
22K
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
246mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMUN2212LT1GOS
MMUN2212LT1GOS
MMUN2212LT1GOSTR

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3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector-Base Cutoff Current (V
Collector-Emitter Cutoff Current (V
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage (I
Collector-Emitter Breakdown Voltage (Note 3), (I
DC Current Gain
Collector-Emitter Saturation Voltage
(V
(V
(I
(I
(I
C
C
C
EB
CE
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 6.0 V, I
= 10 V, I
B
B
B
C
C
= 5.0 mA)
= 0.3 mA)
= 1 mA)
= 5 mA)
= 0)
Characteristic
(Note 3)
CB
CE
= 50 V, I
C
= 50 V, I
= 10 mA, I
(T
E
A
= 0)
B
= 25°C unless otherwise noted)
= 0)
C
E
= 2.0 mA, I
= 0)
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B
= 0)
2
V
V
Symbol
V
(BR)CBO
(BR)CEO
I
I
I
CE(sat)
h
CBO
CEO
EBO
FE
Min
160
160
160
160
3.0
8.0
50
50
35
60
80
80
15
80
80
Typ
100
140
140
350
350
200
150
350
350
5.0
60
15
30
Max
0.18
0.13
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
4.0
0.1
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc

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