MMUN2114LT1G ON Semiconductor, MMUN2114LT1G Datasheet - Page 3

TRANS BRT PNP 100MA 50V SOT23

MMUN2114LT1G

Manufacturer Part Number
MMUN2114LT1G
Description
TRANS BRT PNP 100MA 50V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMUN2114LT1G

Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
246mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Polarity
PNP
Collector-emitter Voltage
50V
Dc Current Gain (min)
80
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMUN2114LT1GOS
MMUN2114LT1GOS
MMUN2114LT1GOSTR

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ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Output Voltage (on)
Output Voltage (off)
(V
(I
(I
(I
(V
(V
(V
(V
(V
C
C
C
CE
CC
CC
CC
CC
CC
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
C
B
B
B
B
B
B
B
B
= 5.0 mA)
= 0.3 mA)
= 5 mA)
= 1 mA)
= 2.5 V, R
= 3.5 V, R
= 0.5 V, R
= 0.25 V, R
= 0.050 V, R
Characteristic
L
L
L
L
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
L
= 1.0 kW)
= 1.0 kW)
(T
A
= 25°C unless otherwise noted) (Continued)
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http://onsemi.com
3
Symbol
V
CE(sat)
V
V
h
FE
OH
OL
Min
160
160
3.0
8.0
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
35
60
80
80
15
80
80
Typ
100
140
140
250
250
140
130
5.0
60
15
27
Max
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Unit
Vdc
Vdc
Vdc

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