DTC114YM3T5G ON Semiconductor, DTC114YM3T5G Datasheet - Page 5

• Manufacturer Part Number: DTC114YM3T5G
• Description: TRANS NPN 50V 10/47K SOT-723
• Manufacturer: ON Semiconductor

Specifications of DTC114YM3T5G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Current - Collector Cutoff (max): 500nA
• Power - Max: 260mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTC114YM3T5G; DTC114YM3T5GOSTR

0.01
0.1
1
4
3
2
1
0
0
0
I
C
/I
B
= 10
10
Figure 4. Output Capacitance
V
Figure 2. V
R
, REVERSE BIAS VOLTAGE (VOLTS)
20
I
C
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EM3T5G
20
CE(sat)
100
0.1
10
1
T
0
versus I
30
A
75 C
= −25 C
Figure 6. Input Voltage versus Output Current
V
O
= 0.2 V
40
C
f = 1 MHz
l
T
10
E
40
A
DTA114EM3T5G Series
= 0 V
= 25 C
25 C
I
C
, COLLECTOR CURRENT (mA)
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50
20
50
5
T
0.001
30
A
1000
0.01
100
100
= −25 C
0.1
10
10
75 C
1
1
0
Figure 5. Output Current versus Input Voltage
1
25 C
40
75 C
2
Figure 3. DC Current Gain
I
C
V
, COLLECTOR CURRENT (mA)
50
in
T
3
, INPUT VOLTAGE (VOLTS)
A
25 C
= −25 C
4
10
5
6
V
O
7
= 5 V
8
V
T
CE
A
= 75 C
= 10 V
9
−25 C
25 C
100
10