NSB9435T1G ON Semiconductor, NSB9435T1G Datasheet - Page 3

• Manufacturer Part Number: NSB9435T1G
• Description: TRANS BRT PNP 30V BIP SOT223-4
• Manufacturer: ON Semiconductor

Specifications of NSB9435T1G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 30V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 125 @ 800mA, 1V
• Vce Saturation (max) @ Ib, Ic: 550mV @ 300mA, 3A
• Frequency - Transition: 110MHz
• Power - Max: 720mW
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA, SOT-223-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1.0E+00
1.0E−01
1.0E−02
100
10
0.25
0.15
0.05
0.3
0.2
0.1
0.1
0
V
0.001
1.0E−01
CE
= 4.0 V
Figure 1. Collector Saturation Region
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (A)
I
C
Figure 5. “ON” Voltages
, COLLECTOR CURRENT (A)
I
B
0.01
, BASE CURRENT (mA)
1
1.0E+00
V
V
BE(sat)
CE(sat)
T
A
0.1
= 150°C
−55°C
25°C
I
1.2 A
0.8 A
0.5 A
0.25 A
C
I
= 3.0 A
C
/I
B
http://onsemi.com
= 50
1.0E+01
10
1
3
1000
0.01
100
0.1
10
10
1.2
0.8
0.6
0.4
0.2
1
1
0
0.1
1.0E−01
0.1
V
CE
= 1.0 V
Figure 2. DC Current Gain
I
I
C
C
Figure 4. “ON” Voltages
I
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
Figure 6. V
, COLLECTOR CURRENT (A)
1.0E+00
BE(on)
1
1
T
V
A
BE(sat)
Voltage
= 150°C
V
CE(sat)
−55°C
25°C
−55°C
T
25°C
I
A
C
/I
= 155°C
B
= 10
1.0E+01
10
10