MMUN2241LT1 ON Semiconductor, MMUN2241LT1 Datasheet - Page 14

• Manufacturer Part Number: MMUN2241LT1
• Description: TRANS PREBIASED NPN 50V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMUN2241LT1

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMUN2241LT1OS

0.001
0.01
0.1
1
0
I
C
/I
−25°C
V
B
R
= 10
Figure 54. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
5
I
C
Figure 52. V
, COLLECTOR CURRENT (mA)
25°C
TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2234LT1G
10
TBD
CE(sat)
15
Figure 56. Input Voltage versus Output Current
75°C
versus I
20
I
C
, COLLECTOR CURRENT (mA)
C
25
http://onsemi.com
TBD
30
14
1000
100
10
1
1
Figure 55. Output Current versus Input Voltage
Figure 53. DC Current Gain
I
V
C
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
TBD
T
10
A
75°C
= −25°C
25°C
V
CE
= 10 V
100