DTA115EET1 ON Semiconductor, DTA115EET1 Datasheet - Page 3

• Manufacturer Part Number: DTA115EET1
• Description: TRANS PNP BIAS RES 50V SC75-3
• Manufacturer: ON Semiconductor

Specifications of DTA115EET1

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: DTA115EET1OS

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
Collector−Base Cutoff Current (V
Collector−Emitter Cutoff Current (V
Emitter−Base Cutoff Current
Collector−Base Breakdown Voltage (I
Collector−Emitter Breakdown Voltage (Note 3)
DC Current Gain
Collector−Emitter Saturation Voltage (I
Output Voltage (on)
(V
(I
(V
(I
(I
(V
(V
(V
(V
C
C
C
EB
CE
CC
CC
CC
CC
= 2.0 mA, I
= 10 mA, I
= 10 mA, I
= 6.0 V, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
C
B
B
C
B
B
B
B
B
= 5.0 mA)
= 5 mA)
= 1 mA)
= 0)
= 0)
= 2.5 V, R
= 3.5 V, R
= 5.5 V, R
= 4.0 V, R
L
L
L
L
Characteristic
Characteristic
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
CB
CE
= 50 V, I
C
= 50 V, I
C
= 10 mA, I
= 10 mA, I
(T
(T
A
A
= 25°C unless otherwise noted)
= 25°C unless otherwise noted)
E
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
DTA123EET1
DTA114TET1/DTA143TET1
DTA143ZET1/DTA124XET1
DTA143EET1
DTA114EET1
DTA124EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA144EET1
DTA115EET1
DTA144WET1
= 0)
B
= 0)
E
= 0)
E
DTA114EET1 Series
= 0.3 mA)
http://onsemi.com
3
V
V
Symbol
Symbol
V
(BR)CBO
(BR)CEO
I
I
CE(sat)
I
V
h
CBO
CEO
EBO
FE
OL
Min
Min
160
160
8.0
35
60
80
80
15
80
80
80
80
80
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
Typ
100
140
140
250
250
140
130
140
150
140
60
15
27
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.18
0.13
0.05
0.13
Max
100
500
0.25
0.2
0.9
1.9
2.3
1.5
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.5
0.2
0.1
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mAdc
nAdc
nAdc
Unit
Unit
Vdc
Vdc
Vdc
Vdc
−