MUN5137T1G ON Semiconductor, MUN5137T1G Datasheet - Page 7
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MUN5137T1G
Manufacturer Part Number
MUN5137T1G
Description
TRANS BRT PNP 100MA 50V SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.MUN5112T1G.pdf
(13 pages)
Specifications of MUN5137T1G
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
22K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
202mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MUN5137T1GOS
0.01
0.1
0.8
0.6
0.4
0.2
1
1
0
0
0
I
C
/I
B
= 10
Figure 14. Output Capacitance
10
V
Figure 12. V
R
10
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
20
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5113T1
CE(sat)
20
100
T
0.1
10
A
1
= -25°C
0
Figure 16. Input Voltage versus Output Current
30
versus I
75°C
30
10
C
25°C
T
f = 1 MHz
l
T
40
E
A
A
= 0 V
= -25°C
I
= 25°C
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
20
40
50
7
75°C
25°C
0.001
1000
0.01
100
100
30
0.1
10
10
1
0
Figure 15. Output Current versus Input Voltage
1
1
V
40
O
= 0.2 V
2
Figure 13. DC Current Gain
I
C
3
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
50
V
4
O
= 5 V
5
10
T
6
A
= 75°C
T
A
7
= 75°C
-25°C
8
25°C
25°C
9
-25°C
100
10