MUN2131T1G ON Semiconductor, MUN2131T1G Datasheet - Page 5
![TRANS BRT PNP 100MA 50V SC-59](/photos/5/24/52413/smini3-f1_sml.jpg)
MUN2131T1G
Manufacturer Part Number
MUN2131T1G
Description
TRANS BRT PNP 100MA 50V SC-59
Manufacturer
ON Semiconductor
Datasheet
1.MUN2111T1G.pdf
(13 pages)
Specifications of MUN2131T1G
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
2.2K
Dc Current Gain (hfe) (min) @ Ic, Vce
8 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 5mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
230mW
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
4
3
2
1
0
0.01
0.1
0
1
0
I
V
C
R
/I
10
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 5. Output Capacitance
B
= 10
I
C
, COLLECTOR CURRENT (mA)
20
Figure 3. V
20
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2111T1
100
0.1
10
1
40
CE(sat)
0
T
30
A
Figure 7. Input Voltage vs. Output Current
= −2°5C
vs. I
V
O
= 0.2 V
f = 1 MHz
l
T
10
C
E
40
A
I
C
60
= 0 V
= 25°C
, COLLECTOR CURRENT (mA)
75°C
MUN2111T1 Series
http://onsemi.com
25°C
50
20
80
5
1000
0.001
T
0.01
100
100
A
30
0.1
10
10
= −25°C
1
1
0
75°C
Figure 6. Output Current vs. Input Voltage
1
75°C
25°C
40
I
C
2
Figure 4. DC Current Gain
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
T
A
3
50
= −25°C
25°C
4
10
5
6
V
O
7
−25°C
= 5 V
V
T
CE
A
8
= 75°C
= 10 V
25°C
9
100
10