MUN2231T1 ON Semiconductor, MUN2231T1 Datasheet - Page 6

• Manufacturer Part Number: MUN2231T1
• Description: TRANS BRT NPN 100MA 50V SC-59
• Manufacturer: ON Semiconductor

Specifications of MUN2231T1

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 338mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

0.001
0.01
0.1
4
3
2
1
0
1
0
0
I
C
/I
B
= 10
10
Figure 4. Output Capacitance
V
Figure 2. V
20
R
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
20
TYPICAL ELECTRICAL CHARACTERISTICS - MUN2211T1
CE(sat)
40
0.1
10
1
0
Figure 6. Input Voltage versus Output Current
V
versus I
30
O
= 0.2 V
60
10
C
f = 1 MHz
I
T
T
E
40
A
A
I
MUN2211T1 Series
= 0 V
C
= 25°C
= -25°C
, COLLECTOR CURRENT (mA)
http://onsemi.com
25°C
75°C
20
80
50
T
6
A
= -25°C
0.001
1000
0.01
30
100
100
0.1
75°C
10
10
1
1
0
Figure 5. Output Current versus Input Voltage
75°C
1
40
25°C
2
Figure 3. DC Current Gain
25°C
I
T
C
V
A
, COLLECTOR CURRENT (mA)
3
in
= -25°C
, INPUT VOLTAGE (VOLTS)
50
4
10
5
6
7
T
8
A
V
CE
= 75°C
V
O
= 10 V
-25°C
= 5 V
25°C
9
100
10