EMC3DXV5T1G ON Semiconductor, EMC3DXV5T1G Datasheet

TRANS BRT NPN/PNP DL 50V SOT-553

EMC3DXV5T1G

Manufacturer Part Number
EMC3DXV5T1G
Description
TRANS BRT NPN/PNP DL 50V SOT-553
Manufacturer
ON Semiconductor
Datasheet
1.EMC2DXV5T1G.pdf (11 pages)

Specifications of EMC3DXV5T1G

Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - Rated
50V
Current Rating
100mA
Mounting Type
Surface Mount
Package / Case
SOT-553
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current Ic
100mA
Base Input Resistor R1
10kohm
Base-emitter Resistor R2
10kohm
Resistor Ratio, R1 / R2
1
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
EMC3DXV5T1G
EMC3DXV5T1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
EMC3DXV5T1G
Manufacturer:
ON
Quantity:
30 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
EMC3DXV5T1G
Manufacturer:
ON
Quantity:
8 392
EMC2DXV5T1G,
EMC3DXV5T1G,
EMC4DXV5T1G,
EMC5DXV5T1G
Dual Common
Base-Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMC2DXV5T1 series,
two complementary BRT devices are housed in the SOT−553 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
and Q
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 6
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
The BRT (Bias Resistor Transistor) contains a single transistor with
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These are Pb−Free Devices
2
, − minus sign for Q
Rating
(T
1
A
(PNP) omitted)
= 25°C unless otherwise noted, common for Q
Symbol
V
V
CBO
CEO
I
C
Value
100
50
50
1
mAdc
Unit
Vdc
Vdc
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
(Note: Microdot may be in either location)
Q1
ORDERING INFORMATION
Ux = Specific Device Code
M
G
3
4
MARKING DIAGRAM
= Date Code
= Pb−Free Package
http://onsemi.com
x = C, 3, E, or 5
5
R1
CASE 463B
R2
SOT−553
Ux M G
Publication Order Number:
2
G
R1
1
R2
EMC2DXV5T1/D
Q2
1
5

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EMC3DXV5T1G Summary of contents

Page 1

... EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network ...

Page 2

... FR−4 @ Minimum Pad DEVICE ORDERING INFORMATION, MARKING AND RESISTOR VALUES Transistor 1 − PNP Device Marking R1 (K) EMC2DXV5T1G UC EMC3DXV5T1G U3 EMC3DXV5T5G EMC4DXV5T1G UE EMC5DXV5T1G U5 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb− ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current ( Collector-Emitter Cutoff Current ( Emitter-Base Cutoff Current ( CHARACTERISTICS ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 PNP TRANSISTOR -25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 NPN TRANSISTOR -25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS −EMC4DXV5T1 PNP TRANSISTOR 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS − EMC5DXV5T1 PNP TRANSISTOR 0.1 0. COLLECTOR CURRENT (mA) C Figure 28. V versus I CE(sat SERIES 1 ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS − EMC4DXV5T1, EMC5DXV5T1 NPN TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) 1 0.8 0.6 0.4 ...

Page 11

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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