NUS5531MTR2G ON Semiconductor, NUS5531MTR2G Datasheet - Page 4

• Manufacturer Part Number: NUS5531MTR2G
• Description: MOSFET/BJT SGL P-CH 12V 8-WDFN
• Manufacturer: ON Semiconductor

Specifications of NUS5531MTR2G

• Transistor Type: PNP, P-Channel
• Applications: General Purpose
• Voltage - Rated: 20V PNP, 12V P-Channel
• Current Rating: 2A PNP, 5.47A P-Channel
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

7. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
8. Guaranteed by design but not tested.
OFF CHARACTERISTICS
ON CHARACTERISTICS
Single−PNP Transistor Electrical Characteristics
Base−Emitter Saturation Voltage
(Note 7)
Base−Emitter Turn−On Voltage
(Note 7)
Cutoff Frequency (Note 8)
Input Capacitance (Note 8)
Output Capacitance (Note 8)
Collector−Emitter Breakdown
Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector−Emitter Cutoff Current
DC Current Gain (Note 7)
DC Current Gain (Note 7)
Collector−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
from Wall/USB
from Wall/USB
Parameter
Voltage
Supply
V
DD
R_sns
Symbol
V
V
V
V
Vbr
Vbr
Vbr
V
CE(sat)
CE(sat)
CE(sat)
BE(sat)
C
I
BE(on)
C
h
h
CES
f
obo
FE
FE
T
ibo
CEO
CBO
EBO
Figure 2. Typical Application Circuit
1
2
3
4
http://onsemi.com
(T
I
J
C
V
I
I
V
I
I
C
C
= 25°C unless otherwise stated)
C
I
I
C
I
= −100 mA, V
EB
CB
C
C
C
= −1.0 A, V
= −2.0 A, V
I
I
= −1.0 A, I
= −1.0 A, I
I
C
E
= −1.0 A, I
= −2.0 A, I
= −1.0 A, I
C
= −0.5 V, f = 1.0 MHz
= −3.0 V, f = 1.0 MHz
Test Condition
= −0.1 mA, I
= −0.1 mA, I
4
= −10 mA, I
V
f = 100 MHz
CES
= −15 V
B
B
CE
CE
B
B
B
CE
= −0.01 A
= −0.01 A
= −0.1 A
= −0.2 A
= −2.0 A
= −2.0 V
= −2.0 V
B
E
C
= −5.0 V
= 0
= 0
= 0
8
7
6
5
−7.0
Min
−20
−20
180
150
100
CHR/USB_ctl
N/C
BAT_FET_N
−0.065
−0.10
−0.13
Typ
Main Battery
−0.12
−0.09
−0.18
Max
−0.1
−0.9
−0.9
330
100
Units
MHz
mA
pF
pF
V
V
V
V
V
V
V
V
−
−